Using moderate resolution capabilities of a desk time-of-flightinstrument, the fragmentation regularity from electron impact mass spectra of vitexin was studied.
利用台式飞行时间质谱的中分辨本领，研究了牡荆素的电子轰击质谱的裂解规律，对裂解途径进行了完全的指认。
The effects of reaction temperature on synthesis of SiC-TiC composite ultra-fine powder phase and the impact of loss on ignition, the use of thermodynamic calculations for analysis of reaction process, while the use of X-ray diffraction and scanning electron microscopy by means of synthetic phase of the powder, such as an analysis of morphology.
考察了反应合成温度对SiC-TiC复合超细粉体物相和烧失量的影响，运用热力学计算对反应过程进行分析，同时采用X射线衍射仪和扫描电镜等手段对合成粉末的物相、微观形貌等进行分析。
The binding energy spectrum and electron momentum spectra of outer valence orbitals of ferrocene have been obtained by using our high efficiency electron momentum spectrometer at two different impact energies, 600 eV and 1500 eV.
利用第三代高效率电子动量谱仪，分别在600 eV和1500 eV两种不同入射电子能量下获得了二茂铁分子外价轨道的电离能谱和电子动量谱的相关实验结果。
The growth interruption at inverted (GaAs-on-AlGaAs) interface had a more impact on electron spin life time in QWs than that at normal (AlGaAs-on-GaAs) interface. Various inverted interface interruption time were used in growing QWs.
研究表明在量子阱反转界面(AlGaAs上生长GaAs的界面)的中断比在正常界面(GaAs上生长AlGaAs的界面)的中断对自旋寿命有更大的影响。
Impact strength and bending strength are increased by 59% and 20% respectively, mechanical properties have little change after electron radiation, but decreased after therma...
树脂的冲击强度分别提高 5 9%和 2 0 %，电子辐照后性能变化不大，常压、真空热循环后性能有所降低，添加纳米材料的有些性能还有所增加。
In this paper the pulse measurement used to measure the pulse ionization electron current for electron impact ion source of time of flight mass spectrometer was discussed, the shortcoming of average current measurement was analyzed, and the practical measuring circuit of the pulse was given.
本文讨论了脉冲测量技术在飞行时间质谱计电子轰击离子源中测量脉冲离化电子流的应用，分析了平均电流测量方法测量脉冲离化电子流的局限性，给出了实际的脉冲测量电
The general comments on the status of measurement and comparison with theories for atomic K-shell ionization cross-section by electron impact are given.
同时，也对8种低Z元素和16种中、高Z元素在keV能区的实验数据和理论模型、经验公式进行了比较，并对目前电子原子碰撞K壳层电离截面的实验测量和理论研究的现状及需进一步开展的工作进行了讨论。
In the measurements, we took some pivotal measures, i. e., 1）by using Monte Carlo simulations, we took into account the effect of multiple scattering of incident electrons through thin samples, the effect of backscattering of incident electrons from substrates as well as the effect of bremsstrahlung photons produced by incident electrons bombarding thick substrates; 2 we made use of Rutherford backscattering spectrometry to determine the thin target thickness; 3 we performed the detection efficiency calibration of the Si detector in the lower energy region by using standard radioactive sources in combination with the bremsstrahlung spectrum of carbon thick-target by electron impact.
在此过程中我们研究了工作中的关键问题，即：采用Monte Carlo模拟方法进行了电子在薄靶厚衬底样品中的衬底效应、多次散射效应和韧致辐射光子贡献的修正；采用卢瑟福背散射技术进行了薄靶厚度的测量；以及采用标准源与电子轰击高纯厚碳靶产生的韧致辐射相结合的办法，进行了Si探测器低能端的效率刻度等。
The temperature had exerted a significant impact on the electron conductivity and hole conductivity of the silver halide micro-crystals.
这个现象从一个侧面证明了空穴去向的多重性：既可以与自由电子复合，又可以与填隙银离子反应，还能够被明胶吸收。
The body effect of PMOS transistors was used to do further temperature compensation. The power supply reject ratio was improved by adopting the cascode and feedback structure. The proposed design exploited the relationship among the threshold voltage, the electron's mobility and the MOS's source-drain current in the subthreshold regime to reduce the impact of process variation to the reference current.
利用PMOS管的体效应实现进一步的温度补偿；利用共源共栅和反馈结构有效地增加了基准电流源德电源抑制比；并利用当工艺发生偏差时CMOS管阈值电压、电子迁移率和亚阈值区MOS管漏源电流之间的关系，降低了工艺涨落对基准电流的影响。
Micro-computer monitors work inside the electron gun to emit electronic, through the acceleration of high-voltage electrodes, aiming at the screen, the screen of fluorescent material by high-speed electronic flow impact, resulting in X-ray, scientific evidence shows that only the more than 20 Roentgen dose of radiation, will constitute a harm to humans, operate microcomputer year will not be more than 0.3 Roentgen; even when engaged in computer work for 30 years, the cumulative exposure will not be sufficient to cause human injury lowest half, but the early stages of pregnancy the fetus is in a cell division, organ differentiation sensitive period, or should be:(1) hours of work per week is not more than 20 hours (2) one meter away from the computer (3) wearing protective skirt (4) the work finished bathing Huanyi, in order to reduce the electromagnetic radiation on the impact of the fetus.
请问怀孕期间操作电脑对胎儿的生长发育是否有影响？微电脑显示器工作时，内部的电子枪发射出电子来，经过高压电极的加速，射向荧光屏，屏幕上的荧光物质，受到高速电子流的撞击，产生X射线，科学论证表明，每年只有超过20伦琴的剂量照射，才构成对人体的伤害、操作微机一年也不会超过0.3伦琴；即使从事微机工作30年，累积的照射量也不足以造成人体损伤最低值的一半，不过怀孕早期(头3个月)胎儿正处于细胞分裂，器官分化的敏感时期，还是应当：(1)每周工作不超过20小时(2)距电脑一米开外(3)穿防护裙(4)工作完毕洗澡换衣，以减少电磁辐射对胎儿的影响。
In the HPPMS process, the sputtered particles are ionized by electron impact and/or charge exchange in accordance to the pulse on/off, and the charged ions are transfered into the vicinity of substrate according to the theory of ambipolar diffusion. The ion energy distribution varies with different working gas pressure.
在HPPMS过程中，粒子随脉冲开关通过电子冲击和电荷交换电离，并按照双极扩散理论向基体附近传输，离子能量分布随工作气压的不同而呈现不同的分布特征。
M, then determined by a mass-spectrometer with electron impact at selected ion monitoring mode.
0.25 μm分离，由电子轰击源于选择离子监测模式下进行检测。
Compared with the Gunn dipole domain, there is only an accumulation layer of photon-activated electrons in the photon-activated monopole domain, but no layer of positive ions; Because the electric field formed by the photon-activated monopole domain and the photon-activated holes is the opposite of the external electric field, the electric field before the monopole domain is enhanced and the electron concentration at the head of the domain is higher than in other regions; a monopole domain can grow until it becomes a luminous domain because of impact ionization, and a luminous domain will evolve into an avalanche luminous domain if it reaches avalanche conditions.
与偶极畴显著不同的是，光激发单极畴内仅有光生电子积累层，没有正离子层；光激发单极畴与光生空穴之间产生了一个与外加电场反向的电场，使畴前电场增强，畴头部电子浓度最高；光激发单极畴生长过程可以一直持续下去，终因电子碰撞电离演变为发光畴，如果碰撞电离达到雪崩强度，将演变为雪崩发光畴。
So the material of their storage ring vacuum chambers must have the characters of low surface thermal outgassing rate, low photon stimulated desorption and resistance to multi-electron impact.
追求储存环真空材料低表面热放气率、抗多次电子撞击和较低的辐射光致解吸已成为建造者主要目标。
By means of metallographic examination, scanning electron microscope examination, hardness test, impact test, bend test, tensile test and so on, the microstructure and mechanical properties of steel pipe were investigated.
为了提高冷弯钢管焊接质量，采用不同工艺参数对其进行焊接，用金相、扫描电镜及硬度测试、冲击、冷弯和拉伸等方法研究了其焊接钢管的组织及力学性能。
The goals of our work are to study the way of TiN coating on the chamber surface, especially on the inner surface of slightness pipe vacuum chamber, to get the surface with the characters of low surface thermal outgassing rate, low photon stimulated desorption and resistance to multi-electron impact, and to achieve experiment data and theory analysis as the basement of the fabrication of future particle accelerator EHV system.
本课题目的是实验研究采用材料表面溅射沉积TiN膜表面处理方法，获得材料极低表面热放气率、抗多次电子撞击和较低的辐射光致解吸，特别是细长管道真空室表面处理，为新一代粒子储存环极高真空系统建造提供实验数据和理论依据。
MS with electron-impact ionization (electron energy 70 eV) was performed in selected ion monitoring mode.
MS与 电子-冲击离子化(电子能源 70个电子伏)是运行在挑选的离子监听模态。
The study of inner-shell ionization cross-sections by electron impact has attracted more attention both experimentally and theoretically.
电子原子碰撞内壳层电离截面在实验及理论研究两方面都具有重要意义。
Laser technique; X-ray laser; three-body recombination; electron impact ionization; electron beam
激光技术； X射线激光；三体复合；电子碰撞电离；电子束