erasing field
erasing field 双语例句
On CHE programming, the higher coupling ratio of control-gate makes the higher electrical field across TOX in Si than Ge. Also because of the continuity of displacement vector, the higher permittivity of Ge would cause the lower electrical field at interface. We get the higher gate current in Si than Ge. On CFN programming, the higher CT in Ge would show the higher electrical field across TOX. However, the parameters of F-N tunneling are calculated and showing the gate current in Si is larger than Ge. On the same mechanism of F-N tunneling erasing, the parameters also show the higher electrical filed of Si would cause the higher erasing speed. The continuity of displacement vector also explains the higher electrical field at interface for F-N tunneling programming/erasing.
从通道热电子穿隧写入的模拟结果发现，由於控制闸极耦合电容的影响，加上电位移向量在半导体-氧化层界面连续的观念，拥有较高介电常数的锗反而得到较小的等效电场，决定了穿隧电流反倒是不如矽基板；在F-N穿隧写入的模拟中，即便锗基板拥有较大的总耦合电容，使得在浮闸的耦合电压大於矽基板，但仍旧是半导体-氧化层界面的电场扮演了穿隧电流的决定性因素，得到的结果仍旧是矽基板的写入速度高於锗基板；在F-N抹除的模拟中，运用与F-N写入相同的数学模型，仍旧看见在锗基板上未能得到速度上的改善，同时用数学的计算展示了合理的解释。
This article analyzes the reason and influence of Magnetic blow on welding arc during the welding process. Through the adjusting and improving of the magnetic field distribution, adopting the anti-magnetic erasing method to eliminate the influence of magnetic blow for welding arc.
分析了磁偏吹在焊接过程中对焊接电弧的影响以及产生原因，通过调整和改善焊接电弧周围磁场分布，并采用反消磁法，克服和消除了磁偏吹对焊接电弧的影响。
The erasing process of stripe domains in (111) - oriented garnet bubble films was investigated experimentally in the presence of both an in-plane field Hin and a static bias field Hb.
实验研究面内场Hin和静态偏磁场Hb作用下，（111）面磁泡膜内条畴的消失过程。
erasing field
相关单词辨析
这组词都有“范围，领域”的意思，其区别是：
field: 主要指经选定在一段时间内作专题研究的方面或领域，含夸张意味。
territory: 指科学知识、活动等的领域或范围。
province: 即可指科学、艺术、学问的领域或范围，又可指个人或机关职权的管辖范围。
domain: 指知识艺术、兴趣或人类活动的领域。
sphere: 指有明显分界线的范围或领域，强调彼此不会干扰、跨越，各不相关。