The transistor must be grounded at the emitter and the driver pin must be connected to the base.
晶体管必须接地在发射器上，并且驱动器插脚必须连接到基座上。
One of such module has been designed using PCI9054 as bus bridge chip, FPGA and the large current Darlington transistor as decoding driver for the switch array.
为解决进口CompactPCI总线开关模块价格昂贵，使用和维修成本高的问题，以PCI9054作为总线桥接芯片，FPGA和大电流达林顿晶体管为开关阵提供译码驱动，实现了CompactPCI总线开关模块的国产化。
So it is important to design domestic CompactPCI bus switch module. One of such module has been designed using PCI9054 as bus bridge chip, FPGA and the large current Darlington transistor as decoding driver for the switch array.
为解决进口CompactPCI总线开关模块价格昂贵，使用和维修成本高的问题，以PCI9054作为总线桥接芯片，FPGA和大电流达林顿晶体管为开关阵提供译码驱动，实现了CompactPCI总线开关模块的国产化。
In a driving circuit of a plasma display, a drain of a first transistor is coupled to a scan electrode and a switch driver is coupled between a gate and a source of the first transistor.
在一种等离子体显示器的驱动电路中，第一晶体管的漏极耦接于扫描电极，切换驱动器耦接在第一晶体管的栅极和源极之间。
Using a pulse signal as a control variable and high-speed switching characteristic of field effect transistor, the modulating circuit implements pulsed laser diode driver.
调制电路以脉冲信号作为控制量，利用场效应管的高速开关特性，实现了对半导体激光器的脉冲驱动。
Selection of single pulses with an all avalanche transistor driver
全雪崩晶体管驱动器选脉冲开关
A design of boost converter using high-power insulated bipolar transistor IGBT module named SKM75GAL123D and driver module named EXB840 is introduced.
介绍了一种用大功率绝缘栅极双极型晶体管（IGBT）模块SKM75GAL123D和驱动模块EXB840设计的直流升压斩波器。
Therefore the design of horizontal driving circuit adoptes naturally the backward design method from the deflection coil of tube and horizontal output transistor back to the driving transformer and horizontal driver.
因此行激励级电路的设计，自然采用了从显象管偏转线圈和行输出管到激励变压器和行激励级的倒推设计法。
In order to switching the power transistor on or off quickly in DC/DC switching regulator, it is necessary to design a special output driver circuit.
为使DC/DC开关电源的功率开关管及时地导通或截止，需要设计专用的输出驱动电路。
This driver uses a transistor which has a low avalanche voltage to sharp the trigger pulse, and then use the pulse which is obtained from this transistor to trigger the Marx bank circuit.
结果表明，对触发脉冲的陡化，可以降低后一级M arx bank电路的雪崩电压，同时使得脉宽更窄，这将更加有利于驱动半导体激光器。
A New Type of Driver for High-power Insulating Double - pole Transistor
一种新型的大功率绝缘栅双极型晶体管驱动器
An integrated laser and optical modulator driver for ultra-high speed optic-fiber communication systems is designed and fabricated in a 0.2 μ m gate length AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) process.
采用0.2μmGaAsPHEMT工艺设计并实现了超高速光纤通信系统用激光二极管/调制器集成驱动器电路。
Leshan Radio Company Ltd - diodes, Schottky diodes, Zener diode, fast recovery diode, bi-directional trigger diode, TVS, ESD, general rectifier diode, high voltage rectifier, switching diode, transistors, general purpose transistor, digital transistor, MOSFET, switch transistor, ICs, voltage reference, three terminal adjustable precision regulator, Darlington array, AC/DC, comparator, logic IC, LDO, dual LDO, DC/DC, LED driver, charge pump, V-detector/reset, bridge rectifiers
乐山无线电股份有限公司-二极管，肖特基二极管，稳压二极管，快恢复二极管，双端触发二极管，TVS，ESD，普通整流二极管，高压二极管，开关二极管，晶体管，通用三极管，数字三极管，MOSFET，开关三极管，ICs，电压基准，AC/DC，比较器、运放，逻辑IC，LDO，DC/DC，桥式整流器
This paper specifically discusses on a transistor based on the Class D audio power amplifier design components and implementation methods, including the following module circuits:preamplifier circuit, delta waves generated circuit, pulse width modulation circuit, driver control circuit, H bridge power amplifier, filter circuit, circuit-level instruction, power supply circuits.
本文中具体论述了一种基于晶体管的D类音频功率放大器的设计组成与实现方法，包括以下单元电路：前置放大电路、三角波产生电路、脉冲宽度调制电路、驱动控制电路、H桥式功率放大电路、滤波器电路、电平指示电路、供电电源电路。
The built-in driver operates at 9 V, and the power MOS transistor has a limit voltage above 80 V and an operating current of 3 A.
其内建驱动器工作电压9V，功率MOS管极限电压大于80V，工作电流3A。
By using Al/Alq 3/TPD/ITO/glass organic/polymer light emitting diode (OLED) as a load and a photo-dual base transistor as a driver, the research on an optical bistability inverter has been carried out experimentally.
对以Al/Alq3/TPD/ITO/玻璃有机/聚合物发光二极管（OLED）为负载器件，以光电双基区晶体管（PDUBAT）型硅光电负阻器件为驱动器件而构成的光学双稳态反相器进行了实验研究。
Based on the transistor`s nonlinear IV characteristics, an analytic expression is derived to relate the parameters of signal delay, power dissipation, driver size, and interconnection load for VLSI system.
基于CMOS晶体管的非线性IV特性，研究发展了关于VLSI输出驱动器在驱动大负载时的优化设计模型。