And the pn-junction diode, the bipolar junction transistor, the metal-oxide-semiconductor capacitor, and the field-effect transistor are covered in 2nd part.
除此之外，针对现在主流的MOS器件与工艺，讨论现代MOSFET的发展趋势。
In order to get the optimal noisy matching, analyzed and compared inside resistance and noise characteristics of bipolar junction transistor、integrated operation amplifier and junction field-effect transistorand the characteristics of three coupled modes.
为了达到最佳噪声匹配，分析比较了双极型晶体管、集成运放及场效应管的内阻、噪声特性及三种不同耦合方式的特点，从而总结出对于低内阻信号源较理想的前置放大器的有源器件是单级或多级并联双极型晶体管。
A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2.67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.
二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。
Moreover, FSA-TFTs can effectively suppress the floating-body effect and parasitic bipolar junction transistor action compared with conventional TFTs.
而且，它可以有效地抑制浮接基体效应(floating-body effect)和寄生双极性接面电晶体效应(parasitic bipolar junction transistor action)。
For the traditional diode string, the parasitic p-n-p bipolar junction transistor devices in the diode string will induce a large leakage current into the substrate, especially under high temperature condition.
因为寄生元件的存在，传统的二极体串将会产生严重的基极漏电流问题，尤其是在高温的状态下。
You can almost always determine the leads of a bipolar transistor with an ohm meter. b-e and b-c junctions will measure like a diode with the b-c junction reading slightly lower than the b-e junction when forward biased.
你几乎总是可以用欧姆表来判断双极性晶体管的脚位。b-e结和b-c结将像二级管那样测量，而且正向偏置时，b-c结的读数稍微比b-e结低一点。
Content outline: Fundamentals of semiconductor physics; PN junction theory; Bipolar junction transistors fundamental operation, current components, gains, emitter efficiency, base transport, high-and low current effects, base-width modulation, Ebers-Moll Model, small-signal modeling, large-signal modeling, frequency characteristics, power characteristics, switch and noise characteristics; Metal-oxide- semiconductor field effect transistor MOS capacitor, basic principles of MOSFET, threshold voltage, strong inversion, weak and moderate inversion, static behavior, dynamic behavior, and equivalent circuits, metal-oxide-semiconductor field effect transistor small-geometry effects, short-channel effect, some secondary effects, SPICE Models for the MOS transistor, deep submicron MOSFET.
内容概要：半导体物理基础； PN 结理论；双极型晶体管基本工作原理、电流成分、增益、发射效率、基区输运、大电流和小电流效应、基区宽度调制、Ebers-Moll 模型、小信号模型、大信号模型、频率特性、功率特性、开关特性和噪声特性；金属氧化物半导体场效应晶体管 MOS 电容器、MOS 场效应工作原理、阈电压、强反型、弱反型、静态特性、动态特性和等效电路、小尺寸效应、短沟道效应、一些二阶效应、MOS 的 SPICE 模型、深亚微米 MOSFET 。
In this study we try to determine the true BJT properties and improved current-gains of Gate-Controlled lateral PNP Bipolar Junction Transistor under two specific circumstances: with and without I. The Gate-Controlled lateral PNP BJT is a four-terminal device, which is made with TSMC 0.18 μm BiCMOS process technology. It consists of collector, base, emitter, and gate.
本研究主要探討考虑基底端电流I(下標 sub以及不考虑基底端电流I(下標 sub两种情况下找出真正双载子接面电晶体特性和较好的电流增益，其所量测的闸控水平式P型双载子接面电晶体(Gate-Controlled lateral PNP BJT)是一个4端点的元件，此元件採用台积电0.18μm BiCMOS製程技术完成，主要包含了集极，基极，射极和闸极。
The characteristic of power switch of bipolar junction transistor (BJT) and the wireless receiving and sending technique are used to carry out the property of low cost and convenient to carry.
运用了晶体三极管的开关特性和无线收发技术，实现了低功耗和便携的要求，同时运用软件方法实现了信号的快速提取。
A bipolar junction transistor relates to the technical field of a semiconductor power device.
双极结型晶体管，涉及半导体功率器件技术领域。
The model of bipolar junction transistor (BJT) and CMOS transistor and the basic circuit units such as current mirrors are briefly introduced;
首先介绍了模拟集成电路在当代社会中的重要性和集成电路研究的必要性，并简要地介绍了双极型晶体管和CMOS晶体管的模型结构以及几种电流镜电路的原理及性能；
Damage of bipolar junction transistor under electromagnetic pulse injected from different electrode
双极型晶体管损坏与强电磁脉冲注入位置的关系
Bipolar junction transistor (BJT) has the self-heating phenomena, which seriously affects the properties of transistor.
对于双极性晶体管，由于自身存在的自加热现象，严重地影响着器件的特性。
Study of High Frequency 4H-SiC Bipolar Junction Transistor
高频4H-SiC双极晶体管的研制
Teaching Practice on Equivalent Circuit of Bipolar Junction Transistor
双极性晶体管等效电路的教学实践
The effect and mechanism of the bipolar junction transistor in different temperature
双极晶体管不同温度的退火效应与机理
Transient response of bipolar junction transistor under intense electromagnetic pulse
双极型晶体管在强电磁脉冲作用下的瞬态响应
Effects of high power electromagnetic pulse injected from base on bipolar junction transistor A Bipolar Energy Gap Reference Voltage with Low Voltage and Temperature Draft
基极注入强电磁脉冲对双极型晶体管的作用一种双极型低压低温漂能隙基准源
Measurement and Controlling of Junction Temperature of Power Bipolar Transistor During Succession Operation Life Test
稳态工作条件下功率晶体管结温的测量与控制
The compound transistor, consisting of a junction field-effect transisto and a bipolar transistor, has proved to possess a complementary characteristic, which is herein analysed and illustrated.
用场效应管和双极型晶体管组成的复合管具有互补的特性.本文分析比复合管的特性，并举例说明其应用。