The CMOS mixed signal sensor IC of compatible photo quadrants array and magnetic linear array are designed and fabricated in 0.6μm double metal double poly standard CMOS process. A 4×4 array of P＋/N-well/P-substrate photodiode and the 4×1 linear array of sector MAGFETs are designed. The pixel size of P＋/N-well/P-substrate photodiode is 100μam×100μm.
本论文设计的光敏象限阵列和磁敏线阵列分别由4×4的有源双重结光电管阵列和4×1有源双向扇形MAGFET阵列组成，双重结光电管的面积为100μm×100μm，共源极双向扇形MAGFET的沟道半径为48μm，源极半径为10μm，源极展角为90°。
A CMOS Magnetic Sensor Integrated Circuits Based on the Synchronized Sampling Function of Sector MAGFET
基于扇形MAGFET同步取样模式的CMOS磁敏传感器集成电路
In this chip, the Magnetic sensor cell is implemented with a novel sector split drain MOSFET transistor (sector MAGFET), which can directly transfer magnetic signal into current output signal. First pET-h α CGRP was transformed to E.
在芯片中的磁敏传感器单元采用扇形分裂漏MOSFET磁敏晶体管（扇形MAGFET），直接将磁信号转化为电流信号输出。
The maximum sensor sensitivity of 3.77%/T of the sector MAGFET is obtained by the experimental results, which is higher than the CMOS rectangle MAGFET already reported.
本论文研制的扇形MAGFET器件的电流灵敏度高达3.77%／T，高于已报道的传统矩形器件研究水平。