Before the introduction of two wide input range of comprehensive integrated schottky diode switches and a new boost regulator mic2605 and mic2606, two facilities were operating frequency of 1.2mhz (mic2605) and 2mhz(mic2606), can provide less than 0.5a switch current, is the latest introduction of micrel mic2601/2 product line to add equipment, dedicated to tv tuners, broadband communications, thin film transistor liquid crystal display bias supply, is the output regulator, single-ended primary inductance converters, dsl applications and local boost regulators.
日前引进两款综合了宽输入范围集成开关和肖特基二极管的新型升压调节器mic2605与mic2606，两款设备的运行频率分别为1.2mhz(mic2605)和2mhz(mic2606)，可提供0.5a以内的开关电流，是麦克雷尔公司最新引进的mic2601/2产品系列的补充设备，专用于电视调谐器、宽带通信、薄膜晶体管液晶显示屏偏压电源、正输出调节器、单端初级电感转换器、dsl应用以及本地升压调节器。
AMPLIFIER input bias current, a function of TRANSISTOR current gain, is also a function of the applied input common-mode voltage.
放大器的输入偏置电流，晶体管的电流放大作用，也具有加到输入共模电压的作用。
The experimental results show that insufficient field implant doses for H-gate pMOSFETs devices will lead to an observable edge back-gate transistor and obvious subthreshold leakage current of the device under a higher back gate bias.
实验结果表明不足的边缘注入将会产生边缘背栅寄生晶体管，并且在高的背栅压下会产生明显的泄漏电流。
A Doherty-feed-forward power amplifier for improving the efficiency and linearity was presented. Influence to the amplitude, the phase and the time delay mismatch of the feed-forward system has been analyzed, and the efficiency factor and the method of efficiency enhancement is discussed. Also the peaking amplifier bias and influence of peaking compensate line length to peaking efficiency point is analyzed. Finally the LDMOS field-effect transistor is used to design the Doherty-Feed-forward power amplifier, compared with the balance structure Feed-forward amplifier, simulation result shows its efficiency enhanced 5% when IMD3 is -65dBc.
将前馈技术与Doherty技术相结合，以满足功率放大器在效率和线性度方面的要求，同时对前馈系统幅度、相位、延时不平衡的影响进行了分析，就其效率因素和增强效率的方法进行了讨论；还分析了Doherty功率放大器中峰值放大器的栅极偏压V(下标 gs和峰值补偿线长度对获得峰值效率点的影响，最后把用LDMOS管设计的Doherty功放作前馈系统的主功放，与平衡结构作主功放的前馈系统相比较，仿真结果显示IMD3达到-65dBc时，其效率提高了5%。
An analog control, in accordance with corresponding changes in the load modulation transistor gate of the base or bias, to achieve the output transistor switching power supply or transistor turn-on time of change in this way can the power supply output voltage in the workplace Conditions of constant change.
一种模拟控制方式，根据相应载荷的变化来调制晶体管栅极或基极的偏置，来实现开关稳压电源输出晶体管或晶体管导通时间的改变，这种方式能使电源的输出电压在工作条件变化时保持恒定。
In a level shift circuit according to the invention, either an input signal IN or an inverted input signal XIN, which are input into the gate electrodes of n-type transistors 1, 2 for signal input, is also given to the substrate of that n-type transistor via p-type transistors 5, 6 for substrate bias.
一种电平移动电路，在将输入信号IN或反转输入信号XIN输入到栅极的用于信号输入的N型晶体管(1、2)中，通过用于衬底偏置的P型晶体管(5、6)将所述信号IN或XIN也提供给该衬底。
A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2.67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.
二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。
A 22kΩ resistor from Pin 7 to ground will increase the DC bias current of the oscillator transistor.
在第 7 脚使用一个 22kΩ的电阻接地，可增加振荡器晶体管的 DC 偏置电流。
Except for the basic Darlington feedback topology, three other derivative configurations are introduced in this thesis:(1) To save the power consumption, a transistor, whose base and collector are connected together, is utilized to substitute the bias resistor.
电路架构上，则采用达灵顿回授式放大器结构。除了基本架构外，本论文另外提出三种衍生架构：(1)为节省功率损耗，利用一个基极和集极相接的电晶体取代基本架构中提供偏压的电阻。
A double pole single throw switch circuit including a first circuit portion corresponding to a first input port, a second circuit portion corresponding to a second input port, and an output port, wherein each of the first and second circuit portions include at least one first transistor providing a portion of an isolation channel, at least one second transistor providing a portion of a transmit channel, and at least one third transistor for providing a control bias for selecting either the transmit channel or the isolation channel.
一种双极单掷开关电路，包括对应于第一输入端口的第一电路部分、对应于第二输入端口的第二电路部分和输出端口，其中，第一和第二电路部分的每个包括：至少一个第一晶体管，用于提供分离信道的一部分；至少一个第二晶体管，用于提供传输信道的一部分；以及至少一个第三晶体管，用于提供用于选择传输信道或分离信道的控制偏压。
According to the saturation voltage as defined in [1], and the current density of the cascade stage, we determine the aspect ratio of the transistor in the bias circuit in order to maximize the output swing.
根据饱和电压和共源共栅级电流密度的定义，本文提出器件宽长比与输出电压摆幅的关系，并设计一种高摆幅的共源共栅级偏置电路。
Fixed bias transistor circuit
固定偏压晶体管电路
In the design of bias circuit, using the method of resistor compensation to compensate the work state of RF power transistor which is affected by the variations of temperature and bias voltage.
在偏置电路的设计中，采用了电阻补偿的方法，对温度和偏置电压的变化对射频功率晶体管工作状态的影响进行了补偿。
The edge crowding effect of emitter current in a transistor caused by self bias of base resistor is one of the factors to limit its capability of loaded current.
由基区电阻的自偏压引起的晶体管发射极电流集边效应，是限制晶体管承载电流能力的因素之一〔1～4〕。
The annealing characteristics under different conditions after 60 Co γ ray irradiation for rad hard 4007 NMOS transistor are explored, the irradiation sensitive parameters are investigated along with the radiation dose, annealing temperature and gate bias.
探讨了加固型CC4007经60Coγ射线辐照后NMOS晶体管的退火特性，研究了辐照敏感参数随辐照剂量、退火温度、退火时间和退火偏置的变化关系。
The bias circuit using a MOS transistor which always operate in linear region to bias the two transistors of the cascode stage operating at the edge of saturation to improve the output voltage swing and subsequently low down the supply voltage.
该偏置电路原理是利用一个始终工作在线性区的MOS管来使共源共栅电流镜的两个级联管均工作在饱和区边缘提高输出电压摆幅，从而降低电源电压。
Damage sensitivity, a characteristic parameter in the study of ionizing radiation damage equivalence in CMOS devices, is a complex function of total dose, dose rate, radiation source, particle energy, supply voltage, gate bias and transistor type.
损伤敏感性是CMOS器件的电离辐射损伤等效研究中的一个特征参量，这个参量是辐照总剂量、剂量率、辐射类型、能量、管子类型、偏置条件、电源电压等的复杂函数。
A two dimensional numerical simulation for NMOSFET with lateral parasitic transistor is presented. The influences of three key parameters such as the doping level, gate bias during irradiation, the bird's beak shape on NMOSFET are studied for total dose radiation hardening performance.
对具有侧向寄生晶体管的NMOSFET进行二维数值模拟，探讨了掺杂浓度、辐照偏压以及鸟嘴形状3个关键参数对于器件抗总剂量辐射加固性能的影响。
Voltage Source and Current Source, Thevenin Theory, Trouble Shooting, Characteristic Curve of Diode, Diode Models, Rectifier Circuits, Input Filtering Capacitor, Voltage Multiplier Circuits, Limiter and Clipper Circuits, DC Clampers and Peak-to-peak Detectors, Zener Diode, Zener Diode Rectifier, Photoelectric Devices, Collector-Emitter Junction, Transistor Characteristics of common-emitter, Base Bias, LED Dirver, Establishing a Stable Q-point, PNP Transistor Biasing, Transistor Biasing, Coupling and By-Pass Capacitors, AC Emitter Resistance, Common-Emitter Amplifier, Other Common-Emitter Amplifiers, Cascaded Common-Emitter Amplifiers, AC Load Line, Emitter Follower, Class B Push-pull Amplifiers, JFET Characteristic Curve, JFET Biasing, JFET Amplifier, VMOS Circuit, Differential Amplifier, Operational Amplifier, Non-inverting Feedback, Negative Feedback.
电子学实验(S0704)(1，1)/应用电子学实验(S0472)(1，1)电压源和电流源、戴维宁定理、故障排除、二极体特性曲线、二极体近似模型、整流电路、电容-输入型滤波器、倍压电路、限制器电路和峰值检测电路、直流定位器与峰对峰检测器、齐纳二极体、齐纳二极体整流器、光电元件、集射极接面、集极特性曲线、基极偏压、LED驱动器、建立一个稳定的工作点 Q、PNP 电晶体偏压、电晶体偏压、耦合及旁路电容、交流射极电阻、共射极放大器、其他 CE 放大器、串接共射极放大器、交流负载线、射极随耦器、B 类推挽式放大器、JFET 特性曲线、JFET 偏压、JFET 放大器、VMOS 电路、差动放大器、运算放大器、非反向电压回授、负回授。
On the Noise Calculation of Bias Circuit of Transistor Amplifier
晶体管放大器偏置电路的噪声计算