The relationship between temperature and development of Spodoptera litura was simulated by the sine model V=A+B sin(C 0+C 1e C 3T +C 2e -C 3T), and the threshold temperature and thermal requirment for its development at different stages were estimated by the direct optimum method.
用正弦模型V=A+Bsin(C0+C1eC3T+C2e-C3T)拟合了斜纹夜蛾发育与温度的关系，并用直接最优法估算了斜纹夜蛾不同发育阶段的温度阈值和所需热量。
Directors Chenhanpei Shanghai real estate market, the new site listed in July There are three main reasons for the reduction, primarily traditional main rooms, off-season arrival, continuous high temperature may prevent property buyers to a certain extent the enthusiasm, so some property developers will be listed date postponed; Secondly, in July, the authorities increased the total pre-sale permit threshold, the previous conditions are not complete due to human factors in the circumstances of the situation for pre-sale permits no longer exist, in the short term there has been a marked decline in the number of listed property; Third, from early July, the city premises Resources Board specified notice period should be completed in three days before the official opening, the previous irregularities in the notice asking from the ranks of the new site notice, it would have been on an upward trend this year the preheat sale in June decreased, from May 39 to 20 at the following, and therefore to a certain extent, resulting from the figures show that the decrease in the number of new sites.
上海市房地产交易市场董事陈汉培表示，7月份新盘上市减少主要有三方面原因，首先是传统意义上房市淡季的到来，连续的高温可能一定程度上妨碍购房者的热情，于是一些开发商将楼盘的上市日期延后；其次，7月份开始，有关部门提高了楼盘预售证的门槛，以前由于人为因素在条件不齐全的情况下提前办理预售证的情况不复存在，在短期内使上市楼盘数量出现明显下降；第三，从7月初开始，市房地资源局明确规定了楼盘预告时间应在正式开盘前3天，把以前不规范的预告楼盘剔除在新盘预告行列之外，据悉，本来今年一直呈上升态势的预热楼盘，在6月份骤减，由5月份的39个一下子降到20个以下，因此一定程度上也造成从数字上显示新盘数量有所减少的情况。
The thermal cracking threshold of fine sandstone was determined with the change of temperature.
结果表明随着温度变化，细砂岩存在热破裂阀值。
The long-term anneal behavior of the integrated dose record s -threshold voltage of PMOS dosimeters at room temperature has been studi ed.
为掌握PMOS剂量计的应用方式并提高其应用精度，研究了PMOS剂量计的辐照剂量记录-阈电压在室温下的长期退火表现。
In the primary experiment, the lasing wavelength of 871 nm, the lowest threshold current of 18 mA and the largest output power of 2 mW are obtained under pulse condition at room temperature using a current source with a 10 μs pulse-width and 100 μs cycle.
初步的实验已实现室温宽脉冲高占空比激射，最低阈值为18 mA，最大峰值功率大于2 mW，激射波长为871 nm，串联电阻一般为100～200 Ω。
The number of writhe induced by acetic acid decreased significanlty and the pain threshold of temperature stimuli increased markedly in mice when administrated with FGC (100, 300 mg·kg-1 FGC (300 mg·kg-1) also prolonged the latency of writhe.
FGC 100 mg·kg-1和300 mg·kg-1能有效抑制小鼠毛细血管通透性，提示该药有抗炎作用。镇痛实验中，FGC 20 mg·kg-1和60 mg·kg-1可明显减少甲醛致痛大鼠抬足次数，FGC 100 mg·kg-1和300 mg·kg-1能明显提高热板致小鼠痛阈，减少扭体次数； FGC 300 mg·kg-1组还能显著延长扭体潜伏期。
The design of the temperature range of -50 ~+600 ℃, for the measurement accuracy ± 1 ℃, as measured Lushu 8of all can be set, the alarm threshold value, when the temperature gauge of all, a warning.
本设计的测温范围为－50～＋600℃，测量精度为±1℃，测量路数为8路，各路可设置上、下限报警值，当各路温度超限时，产生报警。
The body effect of PMOS transistors was used to do further temperature compensation. The power supply reject ratio was improved by adopting the cascode and feedback structure. The proposed design exploited the relationship among the threshold voltage, the electron's mobility and the MOS's source-drain current in the subthreshold regime to reduce the impact of process variation to the reference current.
利用PMOS管的体效应实现进一步的温度补偿；利用共源共栅和反馈结构有效地增加了基准电流源德电源抑制比；并利用当工艺发生偏差时CMOS管阈值电压、电子迁移率和亚阈值区MOS管漏源电流之间的关系，降低了工艺涨落对基准电流的影响。
Experimental results: 1 Increased well number has improved the temperature characteristics of threshold current and external differential efficiency.
透明电流密度的特征温度又取决于辐射复合效率，外部微分效率的特征温度取决于高温下导带电子的泄漏。
This paper applied molecular dynamics to simulate the evolvement of BaTiO3 under the impact of primary knock-on atom, and analysed the influence of PKA`s energy and direction on system temperature and structure, and calculated the threshold displacement energy of different PKA.
本文应用分子动力学，模拟在初级击出原子PKA（primary knock-on atom）作用下BaTiO3体系的演化过程，分析了PKA原子的能量、运动方向以对体系温度以及结构的影响，计算了不同种类不同运动方向的PKA原子的位移阈能。
It is presented that indirect assimilation experiment of CMW data from TCFM method improves effectively not only on vertical velocity field but for precipitation.4 Based on theory analysis, E-Ir relationship is brought forward with two electrification mechanisms. One is inductive mechanism, i. e., cloud particles collide with precipitation particles then flick away, the other is noninductive mechanism because of different temperature, i. e., bigger supercooled cloud particles collide and freeze with hail particles combined with ice scraps. By means of CINRAD and FY2C data assimilation, precipitation intensity Ir can be obtained, then electric field intensity E, discharge time and locations can be achieved with supposed threshold 300KV/m. Though it can not distinguish between IC (Intra-Cloud) lightning and CG (Cloud-to-Ground) lightning, results are still comparable to LLS observations.5 Example analysis shows that the relationship between precipitation data from AMS and CG data from LLS is not very clear.
同化实验对于台风眼区的螺旋形雨带贡献显著，说明TCFM云导风资料同化实验不仅有效调整了模式的垂直速度场，还对降水模拟有了明显改善。4通过理论分析，利用云粒子与极化降水粒子碰撞并弹离的感应起电机制和较大过冷云滴与雹粒碰冻并产生冰屑的温差起电机制下得到的E-Ir，由雷达、卫星遥感资料直接和间接同化模拟得到Ir，来反推E，了解雷暴云中闪电强度的平面分布，设置放电阈值为300KV/m，推算出放电的位置和首次发生闪电的时间。
System will be divided into several large pieces to achieve this goal, a power supply to provide the necessary part of the stability of the voltage, a signal generator to generate the necessary signals as the analog, data on how complete the switch to the cycle of data collection And the choice of acquisition, the analog signal will be completed by 12 accuracy of the A/D converter, a digital signal into the master, master of the ARM7TDMI core for embedded chips, Samsung is here to S3C44B0X as the master chip, the signal through the further analysis, in the LED display, can also keying and Multi-channel Temperature Reco analog switch to achieve a specific way of data acquisition, if there is more than the threshold of the alarm can also have Process.
系统将分为几大块来实现这一目标，有电源部分来提供所需的稳定的电压，有信号发生器来产生所需的信号作为模拟量，有多路数据开关来完成数据的循环采集和选择采集，完成后将模拟信号通过12位精度的A/D转换器，变成数字信号后送入主控器，主控器是以ARM7TDMI为内核的嵌入式芯片，这里用的是三星的S3C44B0X作为主控芯片，通过对信号的进一步分析，可以在LED上显示，也可以通过键控及多路模拟开关来具体实现某一路的数据采集，如果出现超过阈值的情况还可以有报警的过程。
The threshold of development temperature was 7.6℃ and the effective accumulated temperature for the egg stage was 77.8 degree-days.
以食茱萸饲育，卵期分别为9.5、7.0、3.9与3.5日；幼虫期分别为54.8、36.4、21.5与18.3日；蛹期分别为87.6、35.2、11.4与10.3日；成虫寿命分别为12.5、11.0、6.0与6.4日。
Answer: Shoots the frequency wave is the wave band is the 40.67MHZ electromagnetic wave, causes through the different technique to shoot the frequency wave penetration surface layer base first floor the melanophore, depth of penetration 2mm-20mm, resonates the principle through a minute small water-kettle to cause the organization to heat up to the threshold value temperature 65 ℃-75 ℃, both affects to the collagen organization, and may affect to the fat, achieved dispels wrinkles the skin, dissolves the effect which the fat loses weight, does not have any damage to the epidermis.
答：射频波是波段为40.67MHZ的电磁波，通过不同的手法使射频波穿透表层基底层的黑色素细胞，穿透深度2mm-20mm，通过分水子共振原理使组织加热至阈值温度65℃-75℃，既作用于真皮层胶原组织，又可作用于脂肪，达到祛皱紧肤、溶脂减肥的功效，对表皮无任何损伤。
A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2.67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.
二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。
The model base consists of the computer models for dealing with predic-tion of population dynamics, the development of central mite trees, day'smean temperature within specific time interval, the damages made by mitesand for dealing with estimation of the mite population density, foranalysing the economic threshold.
模型库包括种群数量动态计算机模拟预测模型，种群密度估计和抽样模型；春季害螨中心螨株动态预测模型；每日均温中短期预测模型；叶螨为害损失预测模型；经济阈值分〓模型等。
In other hand, a-TFTs:H have good uniformity and low cost, nevertheless, the lower mobility (about 1 cm2/v. s) and large on/off switch operation voltge are the shortcomings. Finally, OTFTs are not only low cost but also could be fabricated in low temperature which really suit for novel flexible applications. But the uniformity and mobility are the worst over the three types before. All of the driving TFT would cause threshold voltage shift and electron properties degradation after long time operation. It leads the driving current becomes lower, so the pixel compensation circuits for such defects have been extensively studied nowadays. In this thesis, we introduce three Voltage-Programmed Pixel Circuits. The transistors are employing LTPS and OTFTs respectively. The design rules are based on the device properties and combined with the concept of System On Glass. We except for improving panels` uniformity, reliability and reduce the cost. It will give advanced cerebration for the large size and flexible displays.
另一方面，a-TFT：H拥有较高的均匀度和较低的制程成本，然而a-TFT：H本身迁移率不高，以及所需驱动开关之跨压很大，而OTFT是很新颖的元件，不只成本较低且可在低温下制作，所以其为可挠式基板驱动元件，但相对均匀性以及迁移率在此三者中是最差的，当面板在长时间操作下，各种驱动元件会因为劣化造成临界电压的漂移以及迁移率的劣化，使得整个驱动电流越来越小，面板寿命变短，因此用以补偿临界电压与对於不同电晶体形态设计适当驱动电路正被广范研究中在本篇论文，提出了三种驱动补偿电路，分别使用LTPS和OTFTs为驱动元件，且设计是利用元件本身特性的优缺点与结合系统於玻璃上之技术，以其有效改善面板画面亮度不均匀，以及可靠度不佳再加上高成本的问题，此将成为大型显示与可挠式面板的前瞻思想。
We selected the 2nd and the 3rd generation yeast with powerful vitality from the yeast mud fermented in tanks in working field as the ideal species source separated from yeast monoplast in beer and the ways to obtain them were as follows: 24 hours after deoxidisation of diacetyl to threshold value and decrease of its temperature to 5℃ was the best time for selection and sample－extraction location was at the nozzle of pressure－discharge pipes.
摘 要：从生产现场大罐发酵的酵母泥中选取第2～3代生命力强的酵母作为啤酒酵母单细胞分离的理想种源，选取的最好时间为双乙酰还原至阈值后降温至5℃，并让其停留24h时取样位置为排压酵母的管口，最后将所得菌种进行初选、复选或模拟生产恒温培养鉴定，选出优良菌株。
A integrated temperature sensor compatible with general CMOS process is designed based on the change of threshold voltage and carrier mobility in MOS transistor caused by temperature.
基于MOS管的阈值电压和载流子迁移率随温度的变化关系，设计了一种与CMOS工艺兼容的集成温度传感器。
The mechanisms of oxide induced crack closure and crack tip oxidation brittlement are responsible for lower crack propagation rate in Paris region at 923K and higher threshold level at 1123K respectively, and this temperature effect does not vary with orientation, loading mode and γ'precipitates morphology.
氧化物诱发裂纹闭合和裂尖氧化致脆机制，分别使923K和1123K具有较低的Paris区扩展速率和较高的门槛水平，这种温度效应不随取向、加载模式和γ'形态而改变。