The concept and mechanism of frequency selective surface are introduced firstly. Influencing factors, such as element, lattice, substrate and incidence wave, are discussed.
首先介绍了频率选择表面的概念和工作机理，讨论了影响频率选择表面性能的因素，如单元形式及尺寸、布阵方式、介质衬底和入射波的性质等。
Influencing factors, such as element, lattice, substrate and incidence wave, are discussed.
文中导出了谱域法求解频率选择表面的场方程，并用伽略金矩量法进行求解。
A layer of tin atoms on a germanium surface forms a flat lattice, but at temperatures below about 150 Kelvin--for reasons that aren't entirely clear--the tin layer spontaneously corrugates to form a new structure, or phase, with one atom out of every three moving away from the substrate.
一层锡原子在锗表面可以形成一个平整的晶格，但是当温度低于150K锡原子层会自发的褶皱起来形成一种新的结构，或者说是新相，这时每三个原子中会有一个运动而离开基质表面。
Mercury cadmium telluride is a sort of narrow-gap semiconductor. It is anexcellent material for infrared photoelectric detectors. It has important applications in the areas ofmilitary and space technology. Cadmium zinc telluride is an alloy ofcompound semiconductor. It is the best substrate to match the crystal lattice of 〓epilayer.
碲镉汞是一种窄禁带半导体材料，由于它是目前主流的红外探测器材料，在军事技术和空间技术领域有着极其重要的应用背景；碲锌镉是一种化合物半导体材料，它是外延碲镉汞薄膜的晶格匹配最佳衬底材料，近些年的研究发展表明，高质量的碲锌镉晶体还可应用于制做红外光电调制器件，红外窗口、棱镜，太阳能电池，X射线、γ射线探测器等方面。
The lattice mismatch between LiGaO 2 and GaN is only 0.2%, so LiGaO 2 is expected to be a promising substrate for the epitaxy of GaN.
LiGaO2与GaN的晶格失配率只有0.2%，是一种很有潜力的蓝光衬底材料。
The results show that, for the elasto-plastic contact of tip-substrate approach and separation process, the material plastic yielding in the atomic level is still governed by the von Mises criterion. For the adhesion of flat-ended wedges, continuum mechanics can be still applied down to a few lattice constants within the contact region, and give reasonable results, apart from the discrepancies near the contact edges. Moreover, adhesion hysteresis occurs during unloading due to the atomic steps, where the unloading curve does not coincide with the loading one. This in turn supports the presumption proposed by Pollock for the adhesion of stepped spheres.
本文首先对针尖—基体模型的弹塑性接触机理进行了深入研究，指出在原子水平上材料的塑性屈服仍由Von Mises准则控制；对平底锥冲头粘着接触的模拟表明，除了在接触区边缘附近有一定差别外，接触力学方法在接触区内几个晶格常数范围内仍能给出令人满意的结果；由于原子台阶效应，加载与卸载曲线不重合，出现粘着滞后，证实了Pollock关于具有纳米阶梯结构的球体粘着滞后现象的推测。
In the surface of the substrate the liquid crystal molecules parallel to the surface as a consequence of the surface potential. Adopting the Lebwohl Lasher model, the mole cular centers of mass are located at the sites of the simple cubic lattice with period boundary conditions.
在基板表面处，液晶薄层受到表面作用势的作用使液晶分子沿面平行排列，采用Lebwohl Lasher模型，将分子质心固定在简单立方晶格的格点上，并对此格点模型赋以周期性边界条件，然后将简立方格点模型分为平行于基板的20个分子薄层，得到各薄层的指向矢分布的数值结果。
The advantages of porous TiAl alloy as substrate of palladium membrane were discussed through three aspects (lattice matching, Linear expansion coefficients proximity and controllability of pore structure).
用反应合成法制备了Al质量分数为35%的多孔TiAl合金，用约束烧结优化孔结构后多孔体的最大孔径约2--3 um，用化学镀方法制备了Pd/多孔TiAl合金基复合透氢膜，研究了复合透氢膜的性能。
The invention utilizes the method of plasma enhancement chemical vapor deposition to grow hydrogenated nanometer silicon film, the silane and hydrogen gas as growing source gas, the mono-crystalline silicon material as substrate. With the lattice matching of monocrystallin silicon substrate and the induction of nonrandom structure, the nanometer silicon crystal grain film in high density can be prepared with the crystal thickness is very thin between 2-4 atom layers, and by changing the proportion of doping of phosphorane, the high electron mobility hydrogenated nanometer silicon film whose conductivity can be controlled is attained.
本发明用等离子增强化学气相沉积方法生长氢化纳米硅薄膜，采用硅烷和氢气为生长源气体，单晶硅材料作为衬底，利用单晶硅衬底的晶格匹配和有序结构诱导的作用，生长出高密度的纳米硅晶粒薄膜，并且其晶界厚度非常狭窄，为2-4个原子层，进一步通过改变磷烷掺杂比例，得到导电性能可控的高电子迁移率氢化纳米硅薄膜。
The result shows that the lattice structure of the substrate has an obvious effect on the thin film growth.
结果表明，基底晶格结构对薄膜生长具有明显影响。
The negative tetragonal distortion was explained by considering the lattice mismatch and thermal mismatch between ZnO and sapphire substrate, and the positive distortion is due to the tensile strain in the parallel direction of Zn_0.9 Mg_0.1 O and the gradual release of the strain.
负的应变是由于ZnO与衬底的晶格失配和热失配，而逐渐变为正值是Zn0·9Mg0·1O与ZnO的晶格常数差异及弹性应变的逐渐释放所致。
XRD patterns show that the AlN thin film grown on (111) MgO substrate has a c-axis orientation of a hexagonal lattice. A possible structure of the interface between the film and the substrate is suggested and discussed.
实验结果表明，所获得的AlN薄膜具有六方c-轴取向，并讨论了衬底和薄膜界面处可能的结构情况。
In order to release the stresses originated from the lattice mismatch and reduce the defect densities, sapphire substrate surfaces are preprocessed by H-plasma cleaning, N-plasma nitriding and the low temperature buffer growth.
为了释放因晶格失配产生的应力，以降低在GaN外延膜中引起的缺陷密度，我们对蓝宝石衬底采用了氢等离子体清洗、氮等离子体氮化以及低温生长缓冲层的方法。
For the study on diffusing processes of adatoms, interaction between the adatoms and the substrate, interaction between two adatoms and its influence on surface diffusion are presented, in the sight of lattice deformation caused by the adatoms.
在研究表面原子扩散过程时，从Cu吸附原子导致的基体晶格畸变的角度，探讨了吸附原子与基体表面晶格之间、以及吸附原子之间的相互作用及其对原子表面扩散行为的影响。
In these epitaxial systems, the different orthorhombic lattice distortion between the film and substrate can trigger various strain states.
将这一薄膜外延生长于不同取向的NdGaO3衬底上时，两者在晶格正交畸变程度上的差别将在外延膜中诱导出不同的应力状态。
A two-dimensional and stressless model was used and the periodic boundary condition was taken into account. Suppose one-dimensional flat lattice as to the substrate, we only considered two kinds of processes of the deposition and the diffusion of adatoms on the growth surface.
模拟模型是二维的且无应力，边界问题用周期性条件来处理，基底是含有一定晶格数目的一维理想基底，模拟过程只考虑沉积和吸附原子在表面的扩散过程。
The large lattice mismatch between the GaAs substrate and the GaN epitaxial layer, resulting in high-density defects in GaAs epitaxial layer and enhanced non-radioactive, is the reason of low photoluminescence intensity of GaAs.
GaN衬底和GaAs外延层二者之间较大的晶格失配，导致GaAs外延层缺陷密度很高，非辐射复合增强是造成GaAs光致发光强度低的原因。
The lattice mismatch between the quaternary layer and the substrate is + 0.3 ‰.
四元层与衬底间失配度为+0.3‰。
The large lattice mismatch between the GaN substrate and the GaAs epitaxial, resulting in the growth of GaAs epitaxial films for three-dimensional island growth.
由于GaN衬底和GaAs外延层二者之间较大的晶格失配，导致GaAs外延膜生长方式为三维岛状生长。
Calculation of the Lattice Mismatch Between Semiconductor Epitaxy and Substrate
参数失配度对混沌同步的影响半导体外延层晶格失配度的计算