The influence of interface growth interruption on electron spin life time t in GaAs/AlGaAs (110) quantum wells grown by solid source molecular beam epitaxy has been investigated by grazing incidence x-ray reflectivity and time-resolved Kerr rotation spectroscopy.
通过掠入射x射线反射谱和时间分辨Kerr旋转谱研究了界面生长中断对量子阱内电子自旋寿命τ的影响。
A new kind of lateral associated self-assembled InAs quantum dots (QDs) was grown by solid-source molecular beam epitaxy at low substrate temperature of 350 ℃ with long time interruption in cycling deposition. In photoluminescence (PL) spectra, 1.55 μ m light emission is observed.
通过引入较长停顿时间，采用分子束外延循环生长方法在350℃低温获得了一种横向聚合的InAs自组织量子点，在荧光光谱中观察到1.55μm波长的发光峰。
Moreover, the heterogeneous nucleation and epitaxy of SiC on solid Si and the carbonization of solid Si are also analyzed.
另外，也分析了固态Si上的SiC的异相成核、外延以及固态Si的碳化过程。
A columnal islands system, which was composed of three layers of self-assembled InAs/GaAs quantum dots (QDs), has been fabricated by solid-source molecular beam epitaxy (MBE) through S-K mode on a (100) semi-insulating GaAs substrate.
利用固源分子束外延（MBE）的方法经SK模式自组装生长由多层InAs/GaAs量子点组成的柱形岛。
The latest technology developments of solid state lighting were reviewed from material epitaxy, chip fabrication process, device package and system application design, which also included the study results from state key laboratory on integrated optoelectronics, Tsinghua University, and the future trend was also discussed.
从材料外延、管芯制作、器件封装和系统应用等方面介绍了半导体照明关键技术的最新进展，其中包括清华大学集成光电子学国家重点实验室的研究成果，并展望了未来的研究方向。
Structure and properties of InGaP/GaAs epilayers grown by solid-source molecular beam epitaxy with a GaP decomposition source
分解GaP源固态分子束外延生长InGaP/GaAs的结构和性能
Strain-Compensated InAsP/InGaP Multiple Quantum Well Grown by Solid Source Molecular Beam Epitaxy
全固源分子束外延1.55μm波段应变补偿InAsP/InGaP多量子阱材料
Preparation of Si_ (1-x-y) Ge_xC_y semiconductor films on Si by ion implantation and solid phase epitaxy
离子注入和固相外延制备Si（1-x-y）GexCy半导体薄膜
Epitaxial Growth of CoSi_2 by Co/C/Si Solid Phase Epitaxy
Co/C/Si（100）结构固相外延生长CoSi2
The modulation-doped AlGaAs/GaAs structures (MD-GaAs) and InP/InP epilayers have been grown by solid-source molecular beam epitaxy (SSMBE) system.
通过固态源的分子束外延系统生长了调制掺杂AlGaAs/GaAs结构材料和InP/InP外延材料。
A columnal islands system, which was composed of three layers of self-assembled InAs / GaAs quantum dots (QDs), has been fabricated by solid-source molecular beam epitaxy (MBE) through S-K mode on a (100) semi-insulating GaAs substrate.
利用固源分子束外延（MBE）的方法经SK模式自组装生长由多层InAs/GaAs量子点组成的柱形岛。
The solid phase reaction and epitaxy mechanism of Co/a-Si/Ti/Si are investigated. The experimental results show that, a solid phase amorphization occurred at the initial stage of thin film reaction.
在反应初期，Co，Ti和a-Si发生固态非晶化反应，形成的非晶层作为扩散阻挡层控制了Co、Si的互扩散和互反应，促进了CoSi〓在Si上的外延。
In this work, SiGeC films on Si were grown by ion implantation and solid phase epitaxy. The growth mechanism of SPE, and properties of strain compensation, thermal stability and carrier transport of SiGeC films were studied systemically.
我们的研究工作正是基于此展开，用离子注入和固相外延方法在单晶Si上制备了SiGeC薄膜，系统研究了薄膜的SPE生长机理、应变补偿特性、热稳定性以及载流子输运特性。