The main products of our company is ZP Standard Recovery Diode、ZK Fast Recovery Diode、KP Phase Control Thyristor、KS Triac Thyristor、KK Fast Thyristor、KG High Frequency Thyristor、Bridge Rectifier、Power Modules、Schottky Module、SF Super Fast Recovery Diode Module、Welding Machine Module、Solid State Relay、Solid State Voltage Regulator、Heat Sink Material and so on.
企业主要生产：ZP型普通整流管、ZK型快速整流管、KP型普通晶闸管、KS型双向晶闸管、KK型快速晶闸管、KG型高频晶闸管、桥式整流器、电力模块、肖特基模块、SF超快恢复二极管、电焊机专用模块、固态继电器、固态调压器、型材散热器等电力半导体器件。
In this article, the reverse characteristic of NiAu-AlGaN Schottky contact is studied.
论文首先对NiAu与AlGaN/GaN HEMT结构形成的肖特基接触的反向漏电流特性进行了研究。
In this article, the reverse characteristic of NiAu-AlGaN Schottky contact isstudied.
论文首先对NiAu与AlGaN/GaN HEMT结构形成的肖特基接触的反向漏电流特性进行了研究。
Also, if the driver stage is an active totem-pole output, the Schottky diode allows the active output pull-up section to disconnect from the LED and pull high.
同样，如果驱动级是有源的图腾柱输出（totem-pole output），肖特基二极管允许有源输出的上拉但却截断了LED的联系。
Both frequency doubler and switch are fabricated with commercial GaAs Schottky diode on Al2O3 substrate in CPW.
倍频器与开关都使用砷化镓萧基二极体以共平面波导的形式制作在三氧化二铝的基板。
A Ka-wide-band frequency doubler employing beam-lead Schottky diodes is developed in the paper.
根据仿真优化结果，我们设计制作了Ka波段的二倍频器，并对其参数进行测试。
I thought at length about putting in a voltage doubler circuit to charge the smaller reversing battery from the main forward battery so that it doesn't have to be removed and charged but some research of available parts suggested that the cost of such an approach was quite high, however an unintended outcome of using the totem pole output design and the separate negative battery approach is that the current spike that is caused by the magnetic field collapse within the motor when the forward MosFET turns off at the oscilator rate at low speeds gets transferred to the negative battery by the protection schottky rectifier across the negative P Channel MosFET and this current pulse is quite significant.
我以为，在长度约将在一个电压倍增电路收取较小的扭转电池从主要着电池，所以它没有被遣送离境，并被控，但一些研究现有的部分建议的成本，这种做法是相当高，但是一个意外的结果，使用图腾柱输出的设计与单独的负面电池的做法是，目前穗这是所造成的磁场崩溃内部的电机时，提出的MOSFET关闭在oscilator率在低速得到转移以负面电池保护肖特基整流器全国的负面P通道MOSFET和电流脉冲，这是相当可观。
As an example, Schottky barrier diode characteristics is simulated using this method.
以肖特基势垒二极管为例，应用该方法，实现了高接触势垒情形下的正反向电流模拟。
Simply inferred the optical-rectification effect in the silicon, discovered the optical electric voltage aeolotropic rule through the experiment of observing the relation between the optical electric voltage and the light wave direction of polarization and the orientation of crystal changing when the Si/Al schottky barrier has been illuminated, and confirm the reason is that the existence of self-field destroy the crystal symmetry, produce second-order nonlinear optical-rectification effect, and the direct-current field which has been produced by the optical-rectification effect and the self-field affect mutually.
推导了硅中的光整流效应，并通过观测Si/Al肖特基势垒受光照时产生的光生电压与光波偏振方向和晶向的变化关系的实验，发现了光生电压的各向异性规律，并确定这是由于内建电场的存在使晶体对称性被破坏，产生二阶非线性效应的光整流，光整流产生的直流电场又与内建电场相互作用的结果。
Excess Cd(superscript 2+) ions can reduce the non-recombination centres, increase the passivation of PAMAM dendrimers on the surface of CdS QDs, and form a Schottky-like barrier which enhances the PL efficiency greatly.
Cd(上标 2+)能减少由S(上标 2-)悬键构成的非辐射复合中心，增强树形分子对量子点表面缺陷的钝化作用，并能在量子点周围形成类肖特基能垒，从而显著增大CdS量子点的光致发光效率。
In the way of MOS taking place of the Fast recovery diode and the Schottky barrier diode, it can cut down on-resistance and reduce the rectification loss.
同步整流技术采用低导通电阻的MOS管代替导通压降相对较大的快恢复二极管或肖特基二极管，大大减小了输出整流损耗，效率相对提高。
A Schottky precise mass spectroscope in light-medium and in heavier nuclei with the mass resolution of △m/m=5×10^(-6) or 5×10^(-7), respectively, has been successfully built up and operated well at ESR (Experimental Storage Ring cooled by electron beam) in GSI, the leading nuclear research institute.
肖特基精密质量谱仪，是建立在GSI所电子冷却存储环上的精密质量谱仪，它对轻中量核与重核的测量精度△m/m分别达到5×10^(-6)，和5×10^(-7)。
The titanium silicide formation is used for ohmic contacts and Schottky barrier contacts, because of its low resistivity.
根据TiSi2低电阻率的特点，常采用通过低温固相反应形成TiSi2制作硅化物欧姆接触和肖特基二极管。
This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies.
这组MOSFET是用来取代单一的MOSFET及同步并行肖特基二极管直流：直流电源。
To reduce the complexity of the proposed model, a simple linear approximation for Schottky diode is introduced.
采用线性近似的肖特基二极管模型进行建模，降低了数学模型的复杂性。
This feature eliminates a protective Schottky diode usually seen in a microprocessor power systems.
此功能消除了肖特基二极管的保护通常在电力系统的微处理器出现。
We have analyzed the signal generation mechanism based on a Schottky diode in detail and we have demonstrated that the suggested mechanism has major problems.
我们详细分析了基于肖特基二极管的信号产生机制，证明了所建议的机理有很大问题。
Finally, we had investigated the interfacial reaction between platinum and InGaP in a Schottky diode structure.
最后，铂金属与磷化铟镓的界面反应也在此论文中讨论。
This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET.
这二极管具有相似的特点，以一个独立的外部肖特基二极管与MOSFET的平行。
We have studied the electrical properties of n-GaN Schottky diode covered with variety of densities of V-defects.
在本论文中，我们针对n型氮化镓表面的V型缺陷进行一系列电性行为的探讨。