The APC circuit was made up of two operational amplifiers, transistor and periphery circuit, and adopted backward photorefractive feedback offset control, which used laser diode module of PD photodiode to watch the backward output optical power.
APC电路由两个运算放大器和晶体管以及外围电路组成，采用背向光反馈自动偏置控制方式，即用半导体激光器组件中的PD光电二极管监测LD背向输出的光功率。
The invention relates to a method for producing electro-optical device, which comprises: forming a switch film transistor with multi grid structures on the insulated surface; forming one inactive film on the transistor; forming one anode on the inactive film, while said anode is connected to the transistor; forming one EL layer on the anode via ink method; and forming one cathode on the EL layer.
本发明的目的在于提供一种用于制作电光器件的方法，包括：在一个绝缘表面上形成具有多栅极结构的开关薄膜晶体管；在所述开关薄膜晶体管上形成一个钝化膜；在所述钝化膜上形成一个阳极，所述阳极电连接到所述开关薄膜晶体管；通过喷墨法在所述阳极上形成一个EL层；以及在所述EL层上形成一个阴极。
Heterojunction bipolar transistor is one of the most important solid-state devices in the optical and wireless communication...
异质结双极晶体管是光纤通信和无线通信系统中的关键器件之一，有着广阔的应用前景，对它的研究具有重要的学术意义。
Detailed introductions were made to the application in frequency converter for unit series multi-electrical level, power bus, micro-computer control and artificial intelligence, total digitalized optical fiber control and power unit standard modulization, insulated grid bipolar transistor drive circuit intelligentize etc.
介绍了变频器的市场情况以及变频技术的现状，详细介绍了单元串联多电平、功率母线、微机控制和人工智能、全数字化光纤控制以及功率单元标准模块化、绝缘栅双极晶体管IGBT驱动电路智能化等技术在变频器上的应用。
In this paper the practical structure of amorphous silicon thin film transistor-based uncooled infrared detector is considered, two mathematical models to calculate infrared absorptance are described and the optical properties are studied in use of optical admittance matrix method.
针对非晶硅薄膜晶体管室温红外探测器的实际结构，提出了两种计算红外吸收率的数学模型，并结合光学导纳矩阵法研究了它的光学特性。
In this paper, by using a Photo-surface Controlled Negative Impedance Transistor (PNEGIT) or a Photo - "∧" Bipolar Transistor (PLBT) which have been fabricated by author recently, a new optical bistable device has been proposed and realized by experiment successfully.
利用作者近期研制的硅光电表面负阻晶体管（PNEGIT）或光电∧双极晶体管（PLBT）两种硅光电负阻器件，提出并成功地实现了一种新型的硅光学双稳态器件。
Heterojunction bipolar transistor (HBT) is one of the most important high speed devices in optical and wireless communication systems.
异质结双极晶体管（HBT）是光纤通信和无线通信系统中的关键器件之一，有着广阔的应用前景，对它的研究具有重要的学术意义和实际价值。
To design high performance tuned optical receivers, a novel unified analytical method of tuned front-end of optical receiver was presented with field effect transistor and tuning network's equivalent models.
为了设计高性能的谐振式光接收机，应用场效应管模型和多种调谐网络的拓扑形式，提出了一个统一的光接收机调谐前端分析方法。
We experimentally demonstrate the operation of a hybrid integrated optoelectronic circuit with optical input and output consisting of a GaAs/AlGaAs multiple-quantum-well (MQW) photodetector, modulator and GaAs metal semiconductor field effect transistor (MESFET).
将GaAs／AlGaAs多量子阱光探测器、光调制器与GaAs场效应晶体管（FET）混合集成，构成FET-SEED灵巧象元。
With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices
非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件
An integrated laser and optical modulator driver for ultra-high speed optic-fiber communication systems is designed and fabricated in a 0.2 μ m gate length AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) process.
采用0.2μmGaAsPHEMT工艺设计并实现了超高速光纤通信系统用激光二极管/调制器集成驱动器电路。
Study on application of transistor type optical coupler in electronic control unit of hydraulic discharging machine
晶闸管型光耦合器在液压下料机电子控制装置中的应用研究
The characteristics, basic circuit, and working wave pattern of transistor type optical coupler and its function in electronic control unit of hydraulic discharging machine were introduced.
介绍了晶闸管光耦合器的特性、基本电路、工作波形及其在液压下料机电子控制装置中的作用。
The input node uses the optical coupling technology, and the output node uses a transistor driving a relay.
输入节点采用光电耦合输入，输出节点采用三极管驱动继电器输出。
By using Al/Alq 3/TPD/ITO/glass organic/polymer light emitting diode (OLED) as a load and a photo-dual base transistor as a driver, the research on an optical bistability inverter has been carried out experimentally.
对以Al/Alq3/TPD/ITO/玻璃有机/聚合物发光二极管（OLED）为负载器件，以光电双基区晶体管（PDUBAT）型硅光电负阻器件为驱动器件而构成的光学双稳态反相器进行了实验研究。
In this paper, by using a Photo-surface Controlled Negative Impedance Transistor (PNEGIT) or a Photo - "∧" Bipolar Transistor (PLBT) which have been fabricated by author recently, a new optical bistable device has been proposed and realized by experiment successfully.
利用作者近期研制的硅光电表面负阻晶体管（PNEGIT）或光电∧双极晶体管（PLBT）两种硅光电负阻器件，提出并成功地实现了一种新型的硅光学双稳态器件。