Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
功率MOS 7是一个低损耗，高电压新的一代，N沟道增强型功率MOSFET。
TC90A92AFG Pinout: The XP161A11A1PR is an N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.
TC90A92AFG引脚说明：该XP161A11A1PR是一个N沟道功率MOS FET的低通态电阻和超高速开关特性。
Utilizing external low on-resistance N-channel MOS- FETs, card power is ramped by two high-side driver outputs that are slew-rate limited at 250V/s.
利用外部低导通电阻的N -沟道MOS - FET的，卡电源是由两个高侧驱动输出，是摆率限制在250V的但凡/秒
We introduce a four-channel 0.6 μ m CMOS programmable weighting analog switch integrated circuit. Two high transconductance N-Channel MOSFETs are used for switching and weighting functions.
报道了0.6μMCMOS4路可编程加权高频模拟开关集成电路，其开关和加权功能分别由两个高跨导的N沟MOS晶体管实现。
This device consists of a n-channel depletion mode MOS transistor, a lateral pnp bipolar transistor and a resistor and has the behavior of " dual negative resistance " characteristics and easily controlled resistance in positive resistance region.
该器件由一n沟耗尽型MOS管、一横向pnp双极晶体管和一个电阻集成而得。它具有双负阻特性和正阻区阻值易于控制等特点。
The second generation integrated circuit pulse width modulator SG3525, which is designed by SG, can be used to drive the N-channel MOS power tube.
美国硅通用半导体公司设计的适用于高频功率MOS管驱动的第二代集成电路脉冲宽度控制器SG3525，用于驱动N沟道的功率MOS管。
The Development of the N-channel Silicon Gate MOS Devices Channelling investigation of As implanted Si crystals
硅栅N沟道MOS场效应晶体管的研制砷注入硅背散射沟道研究
Dual-gate FET Mixers at X-band The Development of the N-channel Silicon Gate MOS Devices
X波段双栅场效应晶体管混频器硅栅N沟道MOS场效应晶体管的研制
The Development of the N-channel Silicon Gate 1024 Bit MOS RAM
BD7503硅栅N沟道1024位MOS随机存贮器的研制
In this dissertation, the effect of excited states on ionization of dopants, inversion-layer charge density of n-channel MOSFET and MOS capacitor is investigated.
本文集中研究了激发态对杂质电离、n-MOSFET反型层电荷和MOS电容的影响。
N-Channel MOS memories-new possibilities for microprocessor memory design
MCM7001型N-沟道MOS随机存储器&为微型信息处理机存储器设计提供新的可能性
Optimization of Key Process Parameters for Submicron n-Channel MOS Transistors Based on Taurus Workbench
基于TaurusWorkbench的亚微米n沟MOS器件关键工艺参数的优化
The Taurus Workbench optimization of the integration n-channel MOS core technic parameter
集成化nMOS核心工艺参数的TaurusWorkbench优化
This device consists of a n-channel depletion mode MOS transistor, a lateral pnp bipolar transistor and a resistor and has the behavior of " dual negative resistance " characteristics and easily controlled resistance in positive resistance region.
该器件由一n沟耗尽型MOS管、一横向pnp双极晶体管和一个电阻集成而得。它具有双负阻特性和正阻区阻值易于控制等特点。