The intensity ratio of TO and LO inMCT was observed to be different. Such difference was explained in terms of the different Ramangeometry arrangement.〓. The laser-induced micro-photoluminescence in the range of 1000～5000〓(1.34eV～1.83eV) was found for the first time in LPE MCT epilayer. The center of photoluminescence wasat 2750〓 or 1.62eV and the FWHM of luminescence was 2000〓 or 0.25eV. We assume thatthe photoluminescence is due to recombination of electron from an anion vacancy resonance levelto the top of valance. In addition, new Raman shift was observed at 750〓 in LPE MCTepitaxial film.〓. The laser-induced micro-photoluminescence with quasi-periodic structure was observed forthe first time at room temperature in one of MOVPE MCT epitaxial film samples. The range offluorescence was from 1.46eV to 2.21eV, i. e., 1.73eV above the conduction band edge.
2首次在LPE生长的碲镉汞外延薄膜的显微Raman谱中，在1000～5000〓范围发现了激光激发显微荧光，该荧光的发光范围换算为电子伏特标度为1.34eV～1.83eV，荧光的发光中心大约位于2750〓，即1.62eV，发光的半峰高宽约为2000〓或0.25eV；指出该显微荧光来源于碲镉汞薄膜中的阴性离子空位共振能级的激光激发发光；观察到了碲镉汞外延薄膜中一个新的Raman散射峰，位于750〓位置； 3首次在一块用MOVPE方法生长的〓Te外延薄膜的显微Raman谱中，发现了1.46eV至2.21eV范围并伴随有周期结构的显微荧光峰，该发光峰对应的能带中心位于〓Te材料导带底上方1.73eV，通过研究得出样品在1.46eV至2.21eV范围的显微荧光峰是由于改进 MOCVD 生长工艺，提高了碲镉汞外延薄膜的结构质量所致；通过分析指出该显微荧光来源于外延层中的阴性离子空位的共振能级发光。
Resistance pure water system, 3-waste treatment system, and shock-proof working-table, and about 80 sets of micro-electrical-mechanical technical equipment are installed, including AMS200 ICP plasma etching system, ICP-2B etching machine, AWB04 bonding machine, MA6/BA6 Karlsus double-face photolithography machine/bonding machine, POLI-400 chemical-mechanical-polishing tool, WL2040 aluminum-wire press welder, OPTI CAOT 22i decktop precision spin coasting system, ZSH406 automatic dicing saw system, DQ-500 plasma photoresist-removing machine, HXS150S automatic centrifugal spinner, AXTRON MOCVD metal organic chemical vapor deposit system, 4470 micro-control 4-tube diffusing furnace, type 4371 LPCVD low pressure chemical vapor deposit system, OMICRON MBE molecular beam epitaxy system, JS-3X100B magnet-control spattering equipment, PECVD-2E plasma deposit apparatus, ZZSX500C electron-beam vapor equipment, JC500-3/D magnet-control spattering-coating machine, H63-14/ZM quartz-tube cleaning machine. Measurement instruments include OLS1100 Confocal Laser Scanning Microscope, DEKTAKIII Surface Profiler, D41-11A/ZN 4-probe resistance test instrument, Nikon L150 metallurgical microscope, and so on.
中心现有80多台各种微机电工艺设备，如AMS 200深硅等离子体刻蚀系统、ICP-2B刻蚀机、AWB04键合机、MA6/BA6 Karlsuss双面光刻机和键合机、POLI-400化学机械抛光机、WL2040铝丝压焊机、OPTI CAOT 22i喷涂胶机系统、ZSH406全自动划片机、DQ-500等离子去胶机、全自动清洗甩干机、AXTRON MOCVD金属有机物化学气相沉积系统、4470微控四管扩散炉、4371LPCVD低压化学沉积系统、OMICRON分子束外延系统、JS-3X100B磁控溅射台、PECVD-2E等离子淀积台、ZZSX500C电子束蒸发台、JC500-3/D磁控溅射镀膜机、石英管清洗机，以及多种常用测试仪器，如OLS1100激光共聚焦显微镜、DEKTAK-III台阶测量仪、D41-11A/ZN四探针电阻测试仪、Nikon L150金相显微镜等。
Anatase TiO〓 thin films were prepared by MOCVD at 400-700℃ using titanium butoxide precursor.
在氧气加入量不足的情况下，得不到符合化学计量比的TiO〓薄膜。
The stability of LiGaO〓 and LiAlO〓 in MOCVD growth temperature and atmosphere was examined using AFM.
LiGaO〓衬底很难用在以H〓为载气的高温MOCVD生长方法中。
TGT will be our first choice in growing high quality LiAlO〓 and LiGaO〓 crystals.
12GaN在LiAlO〓衬底上的外延生长可用常规的MOCVD生长方法上进行，即以H〓作为载气，高温(030℃)分解NH〓作为氮源。
P-type conductivity and crystal quality of Mg-doped GaN grown by MOCVD have been improved through optimization of the magnesium flow rate.
通过优化Mg流量增强了MOCVD生长的GaN薄膜的p型电导并改善了晶体质量。
Unlike InAs QDs systematic research, there is few journal study on GaN material with growth interruption. So, We have grown self-assembled InGaN QDs without using any anti-surfactant by MOCVD successfully in this thesis. Then we discuss the influence on QDs morphology and optical property under different growth interruption time at 30s、60s and 120s with AFM and μ-PL etc…We find that QDs with the smallest size and highest density and the best optical property due to the smallest activation energy are achieved at the most optimized growth interruption time of 60s.
在文献上我们发现，成长中断在GaN材料方面并没有像InAs量子点一样有系统性的研究，因此在本实验我们利用MOCVD成功的成长出自我组成InGaN量子点结构，并且藉由原子力显微镜以及显微光激发萤光等工具来探讨30秒、60秒以及120秒时的不同中断成长时间对於量子点的表面形貌以及光性的影响，结果发现中断成长时间60秒为最优化的时间，因为此时的量子点尺寸最小、密度最高且由於活化能为最小，因此光性品质为最好。
The experiment result is that the tunnel junction of GaInP2/GaAs/Ge of the electron concentration 5×10^19 cm^(-3) and hole concentration 10^17~10^21 cm^(-3) of high doping level of MOCVD growth is obtained under the temperature being 600℃, the flux of H2Se being 3 mL/min N layer doping using se and P layer doping using Carbon (by ratio of group Ⅴ/Ⅲ) condition.
结果表明，在生长温度为600℃，H2Se流量为3 mL/min及隧道结N型层掺杂剂选用Se的条件下，可得到电子浓度为5×10^19 cm^(-3)；而采用自掺C（通过不断改变五族元素与三族元素之比）可得到P型载流子浓度为10^17~10^21 cm^(-3)的GaAs隧道结。
ZnO grown at lower temperatures had better crystal quality, however, second nucleation grains appeared on the surface. Flat ZnO tnin films were deposited by MOCVD in two-step growth. The optical property were similar to the ZnO on Si substrate. After annealing treatment in oxygen ambient, intensity of UV emission decreased while the intensity of green emission increased. However, after RTA treatment in nitrogen ambient, intensity of green emission decreased while the intensity of UV emission increased.
YSZ基板则皆为氧化锌磊晶薄膜，磊晶关系(0002)ZnO∥(111)YSZ，在低温有较佳结晶品质，但出现二次成核成长晶粒，采用两阶段成长则可成功避免二次成核，获得高度均匀平坦氧化锌磊晶薄膜，发光特性与Si基板部分相似在高温成长时green emission讯号逐渐变强，使用氧气氛炉管高温退火则使UV emission减弱、green emission增强，快速升温退火则有相反趋势UV emission增强、green emission减弱。
His current research will focus more on wide gap semiconductor MOCVD growth, inter disciplinary materials investigation and nano-scale device development.
現在的研究課題主要是著重在寬能隙半導體金屬氧化物化學氣相磊晶的成長，多學科材料研究及奈米器件研發。
This paper introduces the physical properties of aluminum nitride waveguide developed by MOCVD, especially on its optical property, and acquires the precise experiment data of its refractive index by waveguide mathod.
本文介绍了用MOCVD制作的氮化铝波导的物理特性，尤其对氮化铝光波导薄膜的光学特性进行了深入的研究，用波导测试的方法获得了其折射率的精确实验数据。
A large range of techniques have been used for the deposition of rare earth metal oxide films and can be divided into physical vapor deposition, solution deposition and chemical vapor deposition (MOCVD) three general categories.
伴随着其广泛的应用，各种制备技术也逐渐被研究来获取稀土金属氧化物薄膜，这些制备技术主要分为物理沉积，溶液沉积和化学气相沉积三种。
In order to enhance the reliability and repeatability of the ferroelectric thin film preparation, the liquid source MOCVD system is designed based on PLC.
为了提高制备铁电薄膜的可靠性和重复性，设计了基于PLC控制的液态源MOCVD系统。
At home and abroad the mainstream film preparation of InN has MOCVD, MBE, HVPE, magnetron sputtering technique.
目前国内外制备InN薄膜的主流工艺有MOCVD、MBE、HVPE、磁控溅射技术。
It analyzes the growth model of GaN film grown by low pressure metal organic vapor deposit (LP MOCVD) with self designed reactor using static boundary layer theory.
用停滞边界层理论分析了低压MOCVD外延GaN的生长模型。
MOCVD Growth of Antimonide Semiconductors and Simulation of Antimonide-based Thermophotovoltaic Devices
锑化物半导体材料的MOCVD生长研究及其热光伏器件的模拟分析
Numerical Simulation of Flow Patterns in the GaN-MOCVD Reactor Fluidization Properties in Micro-scale Fluidized Beds with Acoustic Intensification
GaN-MOCVD系统反应室流场的数值仿真声场强化微小流化床反应器流动特性研究
Control System Design for Productive Model MOCVD for GaN-based Material Growth
用于GaN生长的生产型MOCVD设备控制系统设计
Metal Organic Chemical Vapor Deposition (MOCVD), using Chemical Vapor Deposition of metal organic compounds, is an effective method for acquiring special function materials and membrane.
金属有机化学气相沉积（MOCVD）法是化学气相沉积法的一种，主要选用金属有机化合物为物源进行化学气相沉积，是目前获取各类特殊功能材料和材料的有效方法之一。
At last, we simulate Benard convection within the MOCVD reactor. It is found that the critical Ra number is larger than predicted by current theory.
文章最后还模拟了MOCVD反应器内的Benard对流，发现发生Benard对流的临界Ra数大于理论预期值，其原因可能是由于模拟条件并非纯自然对流，反应腔内强迫对流依然发挥一定作用的缘故。