The results showed that CTR degradation and noise increase were due to the increase of Si-SiO2 interface defects at the collector junction and emit junction in phototransistor.
结果表明CTR退化和噪声增加都归因于辐射后光敏晶体管集电结和发射结处Si-SiO2界面缺陷增多。
In chapter 3, the origin of the complex magnetoresistance in La_(1-x)Ca_xMnO_3/SNTO p-n junction was studied by combining the complicated band structure of La_(1-x)Ca_xMnO_3 with charge injection characteristics in p-n junction. Due to the subtle interplay among the Hunds coupling, JT effect and crystal field of La_(1-x)Ca_xMnO_3, the filling of the electrons from SNTO in the different subbands of LCMO at the LCMO-SNTO interface plays a key ingredient in understanding the remarkable MR variations for the heterojunction.
第三章结合La_(1-x)Ca_xMnO_3中与自旋有关的复杂能带结构以及p-n结中存在的电子注入的特点，详细地分析了La_(1-x)Ca_xMnO_3／SNTO p-n结中复杂磁电阻的起源，即由于锰氧化物中晶场劈裂能、自旋劈裂能、Jahn-Teller能等能量之间微妙的相互竞争，SNTO中的电子在外电场的作用下有选择的被注入到LCMO复杂的与自旋相关的有关能带中，那些被填充到e_g~(1↑)和e_g~(2↑)带的多数自旋载流子将导致负磁电阻；被填充到t_(2g)~↓带的少数自旋载流子将导致正磁电阻。
A liquid junction is the interface between two miscible electrolyte solutions.
液体接界是两个可混溶液的电解质溶液之间的界面。
The interface conditions of organic and inorganic protective materials are observed by the scanning electron microscopy method. SiO〓 or SIPOS film contacts with silicon pn junction perfectly. The low molecular produced in the condensation crosslinking process of material SP makes the high internal stress of interface, causing the gaps formed at the contacting site. Its interface condition is worse than that of the addition organopolysiloxane gel JUS.
对高压硅器件表面保护材料有机硅凝胶进行负针尖电晕带电的实验研究，负电晕注入使材料捕获电子，会引起高压半导体器件表面耗尽区的展宽，但这种注入电荷是不稳定的，此结果与以前通过加热加压驻极化形成的表面电荷具有不同的特点。
Using this method, the interface characteristics of angle beveled mesa structure high-voltage pn junction protected by organic or inorganic materials are measured, such as the etch passivation surface, the interface of the semi-insulating polycrystalline silicon -pn junction, the interface of organic silicone resin modified polyester -silicon pn junction, the interface of organopolysiloxane gel JUS-silicon pn junction.
根据有机材料聚合机理的不同，重点分析了SP硅漆和JUS有机硅凝胶两种保护材料与硅界面接触状况，实验研究表明：缩合聚合的SP硅漆接触面，由于固化中有低分子产物产生而在接触面处产生应力，并留下空隙，而加成型的JUS有机硅凝胶与硅表面接触十分良好。
It is found that the performance of the HBT will degrade as the two interfaces segregate, and a considerable parasitic barrier will be formed if SiGe/Si interface is only tens angstroms away from pn junction interface towards the base, drastically deteriorating the current gain and cutoff frequency.
发现两界面偏离时器件性能会变差。尤其是当pn结位于SiGe/Si界面之前仅几十？就足以产生相当高的电子寄生势垒，严重恶化器件的性能。
At the base and near the p-n junction interface when diode is working under the applied alternating current.
基于p-n结二极管的理想工作状态的基本假定，推导了二极管在交流电下工作时其基区和p-n结分界面附近上的时间常数与二极管空间尺寸、扩散长度、载流子寿命和外加交流电频率等的依赖关系。
The results show that for a better description of the current transport properties for abrupt AlGaAs/GaAs HBT, the current variance caused by the disturbance of the energy barriers at abrupt junction interface must be taken into account.
结果表明：为了精确描述电流传输，必须考虑突变结界面势垒形状及高度扰动所引起的电流变化。
Heterojunction field-effect transistor (HFET) produced by AlGaN/GaN, even without doping, has a very high density of two-dimensional electron gas (2DEG) due to its strong polarization effects in the hetero-junction interface.
由其制作的AlGaN/GaN异质结场效应晶体管（HFET），即使没有经过掺杂，但由于其强的极化效应，在其异质结的界面处也有非常高密度的二维电子气（2DEG）。
Taking into account the spin polarized and interface roughness scattering effect, within scattering formalism, we calculate the shot noise in the ferromagnet superconductor tunneling junction.
考虑到铁磁层中的自旋极化效应与粗糙界面散射效应，利用散射理论，讨论铁磁超导隧道结中的散粒噪声。
Two bipolar technologies of dielectric insulation and junction insulation are compared and analyzed, and the advantages using dielectric insulation bipolar technology to implement high voltage function of monolithic user interface integrated circuit are discussed.
本文对介质绝缘和结式绝缘两种双极工艺进行了比较分析，讨论了用介质绝缘双极工艺来实现程控数字交换机单块用户接口集成电路高压功能的优越性。
An analytical study of the effective recombination velocity at the interface of such a high-low junction has been made.
在此情况下，对高低结界面的有效复合速度作了解析分析。
From the spectrum responses curve fitting, obtained parameters are the minority carrier diffusion lengths in three zones, the thickness of AlGaAs, the junction depth, the recombination velocity at front surface and interface, etc.
从SR拟合求得三个区的少子扩散长度、AlGaAs层厚度、结深、前表面和界面复合速度等七个结构参数。
The effective surface recombination velocity at the interface of diffused n + n high-low junction in solar cells
太阳电池扩散N~+N高低结界面的有效表面复合速度
The fractography showed that the composite materials prepared by the hot pressing method took place fracture in the interface junction between matrix and particulate reinforced; and under high pressure sintering, SiC and aluminum matrix composites had a strong combination, most SiC cleavage fracture occurred.
断口分析表明，高压烧结的复合材料中SiC与基体结合较好，SiC大都发生解理断裂；热压烧结的复合材料在SiC增强相与基体界面的结合处发生断裂。
The interface property of palladium silicide-silicon (P-type) Schottky Barrier Diode (SBD) has been studied by AES spectrum and EBIC image. The thickness of Pd_x Si_y layer and the deepness of schottky " junction " are estimated.
对硅化钯-P型硅肖特基势垒二极管（SBD）的界面性质作了AES谱和EBIC像分析，估算了PdxSiy层厚度和肖特基结的结深。
According to the " conjunction " condition of junction interface and the boundary condition around the subsurface elastic cylindrical inclusion, a set of infinite algebraic equations about the problem can be obtained.
利用公共边界上的契合条件和地下弹性夹杂的边界条件，建立起求解该问题的无穷代数方程组。
It is found that dc Josephson currents are suppressed by rough interface scattering and the Josephson effect depends on strongly the symmetry of s/I/s junction.
研究表明，结界面的通常势垒和粗糙散射均抑制结中准粒子的Andreev反射，降低了流过s/I/s结的直流Josephson电流，直流Josephson电流I随温度T的变化关系与结两侧的对称性有关。
It is found that the conductance exhibits a sharp junction peak at Zero bias and gap while the spin flip scattering increases, and rough interface scattering can suppress the Zero bias and gap conductance peaks.
研究表明，自旋反转效应能使零偏压电导峰和能隙峰变得尖锐，而粗糙面散射能压低零偏压峰和能隙峰。
Rough interface scattering effect on tunnel spectrun in FERROMAGNET-HIGH t_c Superconductor Junction
铁磁-高Tc氧化物超导结中的粗糙界面散射效应对隧道谱的影响