This model consists of a noise current source I n1 at the input and another, I n2, at the output.
将这些理论应用到光纤通信接收机前置放大器的噪声计算上，用统一的方法，算出了光接收机BJT和FET前置放大器的等效输入端噪声电压电流功率谱，供光接收机设计使用
The approach uses a pulsed semiconductor lasers, a low-noise and low-temperature receiver with a PIN diode detector and FET transimpedance amplifier together, and means of digital-averaging and digital-filtering signal processing, to reduce the receiver`s noise to a minimum. It uses a Y type fiber distributor to reduce the reflection form the front of tested fiber too. By enhancing the receiver s sensitivity and signal-noise ratio we can enlarge the dynamic range of PC-OTDR greatly.
采用脉冲半导体激光器组件，低噪声、低温PIN-FET组件，使用数字平均结合数字滤波的信号处理方法，最大限度地抑制接收机的噪声；用Y型光纤分路器，降低前端反射，提高接收机的灵敏度和信噪比，使PC-OTDR获得大动态范围。
In chapter 3, the general circumstance of microwave oscillator with dielectric resonator and electronic tuning are introduced, and we analysed the principles and methods of design, then we discussed the principles and designing methods of varactor diode tuning according to the principle of the FET oscillator.
第四章先介绍了FET倍频器和放大器的基本理论，然后介绍了分析设计倍频器和放大器的两种重要的方法：谐波平衡法和S参数法。
Guidelines on the use of FET as well as the IAR compiler environment for the use of guidance and attention.
详细说明：送给玩430的朋友。关于FET的使用指南以及IAR编译环境使用指南和注意事项。
In chapter 1, The author discusses particular the development trends of the microwave integrated circuits of FET by referring to a lot of reference and date, so the importance of the large signal model of the power MESFET can be realized.
即将宽栅微波功率MESFET的六个单胞结构，在电学性能上，分割成为两个单胞和两个双胞的结构形式，通过测量这些较小栅宽的MESFET的S参数，为间接获得宽栅MESFET的S参数提供技术支撑。
Results ^18F-FET was prepared within 50 min with good radiochemical yield （40%, decay not corrected） and radiochemical purity （〉 97%）.
结果^18F-FET的合成时间约为50min，放化产率为40％，放化纯〉97％。
The common-source input impendence of FET is very high.
场效应管的共源极输入阻抗很高。。
The lengths of various switching intervals are determined by how fast the FET input capacitance can be charged by current from the generator.
各种开关间隔的长度取决于如何快速的场效应管输入电容可以由目前的收费从发电机。
Note that the low-leakage FET input to the CMOS Error Amplier induces no bias current error to the calculation.
请注意，低泄漏的CMOS场效应管输入到误差放大器的偏置电流不会引起错误的计算。
The common mode range of the TI+ and TIC pins is from 1.2 V to VDD C 1.2 V. This is an FET gate input.
这是TI +和议会引脚的共模范围是从1.2 V至VDD的 1.2五，这是一个场效应晶体管栅极输入。
This FET gate input has approxi- mately 2pF of shunt capacitance.
这FET的栅极输入端并联边界建立三方共同2pF电容。
AMPLIFIER transient response is faster through the middle of the common-mode range by as much as a factor of 2 for bipolar input stages and by a factor of the square root of 2 for FET input stages
如果整个输入共模范围里两个差分对都有效的话，共模输入电压在共模范围中间，运算放大器的瞬态响应将加快，对于双极输入差不多加快2倍，而对于FET输入加快根号2倍(1.414)。
The present invention relates to one kind of FET with polysilicon source and vertical channel structure and its preparation process.
本发明涉及一种多晶硅作源端的具有垂直沟道结构的场效应晶体管，及它的制备方法。本发明的垂直沟道场效应晶体管，其特征在于用多晶硅作器件的源端。
The advantage of using a high-dielectric-constant material is that it can be made physically thick, to limit the gate leakage current, while being electrically very thin, to provide adequate control over the FET channel and to maintain or increase performance.
使用高介电常数材料的好处就是可以使用物理上更厚的介电层来降低栅泄漏，同时在电气性能上却相当于很薄的氮氧化硅材料，这样就能为FET沟道提供足够的控制来维持性能的提高。
This book describes the principle of FET circuit analysis, it is rare good material!
详细说明：本书讲述了场效应管电路的原理分析，是不可多得的好教材！
Thus we can real time and dynamic analysis the mechanism of affect process of drug on living cell.
我们研究了场效应管FET细胞传感器和一种光寻址单细胞传感器。
The sense FET provides a much more efficient way to measure current than conventional resistance methods.
场效应管的意识提供了一个更为有效的方法来测量电阻的方法比传统的电流。
In the research of new PET imaging agents, radiolabelled amino acids have been widely studied.
在新的PET显像剂的研究中，标记氨基酸被广泛研究。O-2-[~(18F]氟乙基-L-酪氨酸~(18F-FET是一种已被合成的PET药物，实验证明它不会被进一步代谢和参入蛋白质，但恶性细胞中增加的氨基酸转运同样可以体现癌组织中增加的氨基酸要求。
The driver in turn reduces the gate voltage and drives the power FET into its linear region, which switches the output into a constant current mode and simply holds the current constant while varying the voltage on the load.
反过来，减少了栅极驱动电压和纳入其线性区域，其中就切换到恒流模式和简单的输出电流恒定，而持有不同的负载上的电压驱动功率场效应晶体管。
An active Q-switching circuit using a transformer is described for reducing the recovery time of NQR probes. A MOSFET was used to control the coupling and decoupling states of the Q-switching circuit to the probe so that it did not operate during the reception of NQR signals.
介绍了一种用于主动减小NQR探头恢复时间的Q值变换电路，它利用MOE-FET控制变Q电路与探头电路的耦合，并通过变压器增加与电感线圈串联的阻抗值以达到改变Q值的目的。