Under the influence of the valley-orbit splitting, the kink effect about the flat-band voltage on the C-V curves was decreased. In addition, the influence of the valley-orbit splitting on the C-V characteristics got higher with the doping concentration increasing or the temperature decreasing, and it related to the donor energy level too.
考虑到能级分裂后，电容C-V特性曲线平带附近的Kink效应，得到有效减弱；并且能级分裂对C-V特性的影响，随掺杂浓度的增加和温度的降低而增强，同时也与杂质能级深度相关。
The results show that with appropriate concentration ranging in 1.0%-5.0%, Ta can be doped into rutile TiO2 lattice without causing any change in rutile TiO2 crystal structure. Therefore, the surface oxygen vacancies and the donor energy level near the bottom of the conduction band lead to easier departure of photoinduced electrons from holes to achieve stronger photocatalytic activity. The highest photocatalytic oxygen evolution and PL Spectra intensity are achieved. When the concentration of Ta is 1.0%, the O2 evolution speeds are 130.4 and 69.6 umol/ under UV irradiation and visible radiation, which are 14.6% and 12.1% higher than those before doping, respectively.
结果表明：Ta掺杂量在1.0%~5.0%范围时，Ta掺杂没有改变金红石型TiO2的晶型，表面形成氧空位，在导带底附近形成施主能级，有利于光生电子和空穴的分离，掺杂催化剂光致发光强度与其光催化析氧活性的变化趋势一致；当Ta掺杂量在1.0%时，掺杂催化剂的光催化分解水析氧活性最高，紫外光和可见光下光催化分解水的析氧速率分别为130.4和69.6μmol/，比金红石型TiO2掺杂改性前的析氧速率分别提高14.6%和12.1%。
It was shown that the improvement of electric properties in 1%Eu-PZT can be attributed to Eu donor doping, which decreases the concentration of defects such as oxygen vacancies and holes, while the degradation in fatigue and leakage current properties shown in the films with more than 1mol% Eu dopant results from the apparently dominant acceptor doping, which increases the concentration of oxygen vacancies and holes.
结果表明，1mol％Eu施主掺杂，可以减少氧空位以及空穴等缺陷浓度，因此1％Eu-PZT薄膜的极化疲劳和漏电流特性得到明显改善；高于1mol％Eu的受主掺杂作用使薄膜中氧空位以及空穴等缺陷浓度增加，导致PZT薄膜电学性能恶化。
The results show that the different doping turns of donor additive don t change the crystal structure of BaTiO3-based PTC materials. Compared to doping turn after synthesizing BaTiO3 compounds, doping time before synthesizing BaTiO3 compounds is in favor of ion diffusion, at the same time some particles are connected with each other. At a give...
研究结果表明：选择不同的施主掺杂时机对BaTiO3基PTCR材料的结构没有影响；与预烧后掺入施主杂质相比，在预烧前掺入施主杂质有利于离子的扩散，同时粉末颗粒之间出现粘结现象；在相同的烧结工艺下，预烧前掺入施主杂质的样品的平均晶粒尺寸要比预烧后掺入施主杂质的样品的平均晶粒尺寸大；预烧前掺入施主杂质的样品的电阻率要比预烧后掺入施主杂质的样品的室温电阻率小。
At low bias, the introduction of the donor atom nitrogen and acceptor atom boron can weaken the electron transport, especially the acceptor doping significantly suppresses the electron transport.
在低偏压下，引入的给体原子N和受体原子B都削弱了C60的电子输运，特别是B原子掺杂对电子输运有重要的抑制作用。
Photoluminescence spectrum at 77 K with a characteristic of N related neutral acceptor bound excitons (A0X) was given. The mechanism of p-type conductivity realized by donor-acceptor co-doping was proposed, which is useful to the control of conductivity in ZnO films.
给出了N相关的中性受主束缚激子为特征的低温光致发光谱，提出了施主-受主共掺实现ZnO薄膜p型掺杂的机理，所得结果对ZnO薄膜的导电类型控制具有普遍性意义。
By doping donor element in the film, P-type semiconductor film will be achieved, and this is quite essential for the development of semiconductor materials with P-N junction.
而通过在薄膜中掺杂受主元素，可以获得P型半导体薄膜，从而对于发展具有P-N结结构的半导体材料有重大帮助。
However, the pure CdTe films have high electrical resistivity and this is mighty unfavourable to improve the conversion efficiency of CdTe solar energy cells, and the best way is to doping donor or acceptor in pure CdTe films.
但本征CdTe薄膜均为高阻半导体，这对于提高CdTe薄膜太阳能电池的光电转换效率是极为不利的，要提高CdTe薄膜的光电性能必须通过施主或受主的掺杂。
The results indicate that three kinds of charge compensation forms are formed. For NHs-doping, N and H atoms form strong covalent bond, H atom as a donor supplys an electron for N atoms and H-N forms donor-acceptor pair charge compensation form.
计算结果表明，对于NHs掺杂，N和H形成了很强的共价键，H作为施主提供一个电子给N，H-N形成施主-受主对电荷补偿形式。
Research on Semiconductor Ceramic Materials: Double Donor Doping BaTiO_3
双施主掺杂BaTiO3半导体陶瓷材料的研究
The degeneracy factors and the interrelation between Au donor and acceptor are taken into account in statistical calculation. Both experimental and calculated results show that Au doping at high concentration can change N-type high-resistance silicon into P-type.
统计计算及简并因子和金施主与金受主的相关性，实验和计算结果都表明，高浓度金掺杂可以改变N型高阻硅的导电类型。
Common donor dopants are Y 3 + and Nb 5 + Usually donor doped content lies in range from o 2 to 03 percent Factors influencing on the content are purity of used raw materials, flux for sintering, donor doping process and the others.
常用的施主加入物是Y3＋和Nb5＋，施主掺入量一般控制在x＝0.2%～0.3%为宜。影响施主掺入量的因素有原料纯度、烧结助剂、掺入施主的工艺等。
Only proper Al content can enhance the effect of donor-acceptor co-doping, promoting more N incorporating into ZnO films.
只有适量的Al含量才能有效增强施主一受主共掺杂的效果，促进N受主的掺杂，使更多的N溶解到了ZnO薄膜中。
For every dopant has its advantages and disadvantages, results of recent studies show that double-donor doping and donor-acceptor codoping can improve the performance of the material remarkably.
由于各掺杂物的优缺点不同，近几年研究发现，双施主掺杂和施受主共掺能够很好的改善材料的性能。
The effects of donor doping amount, cooling conditions after sintering and oxidation temperatures on the semiconductivity of SrTiO_3 have been studied.
研究了施主掺杂量，烧成后的冷却条件、氧化温度对SrTiO3半导化的影响。
F-donor doping not only increases the carrier concentration of the film, but also passivates the surface defects of ZnO nanocrystals.
F的施主掺杂不仅提高了薄膜的电子浓度，而且钝化了ZnO纳米晶表面的缺陷态。
An Anomaly Phenomenon of the Interaction Between Donor Doping and Acceptor Doping in Highly Donor-Doped BaTiO_3 Ceramics
高施主掺杂BaTiO3陶瓷中施、受主杂质相互作用的一种异常现象
Common donor dopants are Y 3 + and Nb 5 + Usually donor doped content lies in range from o 2 to 0 3 percent Factors influencing on the content are purity of used raw materials, flux for sintering, donor doping process and the others.
常用的施主加入物是Y3＋和Nb5＋，施主掺入量一般控制在x＝0.2%～0.3%为宜。影响施主掺入量的因素有原料纯度、烧结助剂、掺入施主的工艺等。