The influence of fulgurite medium, annealing temperature and the critical size of nanoparticles on growth is analyzed in detail, and the solid-phase growth model is proposed.
实验分析了熔盆介质、热处理温度和颗粒临界尺寸对纳米颗粒自组织生长的影响，提出了固相生长机理模型。
The degree of retardation of oxygen precipitation was different by n-type heavily dopants. On the condition of the same concentration of dopants and oxygen in heavily doped Cz-si, dopant of As had stronger retardation-3-than dopant of P.(3) The morphology of induced defects by oxygen precipitate in heavily doped Cz-si was affected by n-type dopants. Stacking faults were observed in heavily P-doped Cz-siliocn, but dislocation loops were observed in heavily As-doped Cz-si. Because of that the nucleation critical radius of oxygen precipitate in heavily doped Cz-si is affected by dopants, combined with free-electron effect and dopant-intrinsic point defect interaction, there are reverse influence on oxygen precipitation in heavily doped Cz-si between p-type and n-type dopants. Owing to the covalent radii effect of dopant, the degree of retardation of oxygen pricipitation and the morphology of induced defects by oxygen precipitates are not same among n-type heavily P-doped Cz-si.2. With different nucleation annealing, the behavior of oxygen precipitates and induced defcts in heavily As-doped Cz-si after two step Lo-Hi temperature annealing was investigated. It was found that (1) Heavily dopant of Sb only retarded the nucleation of oxygen precipitates and had no influence on the growth of oxygen precipitates, and stacking faults was observed. Heavily dopant of As retarded not only the nucleation but also the growth of oxygen precipitation, and dislocation loops was observed.(2) oxygen precipitation behavior in heavily doped Cz-si wafers wer
采用不同低温形核条件，对低高温两步退火重掺As、Sb硅片氧沉淀及其诱生缺陷行为深入研究，指出：重掺sb原子对氧沉淀的低温形核有抑制作用，而对氧沉淀的高温长大不产生影响，氧沉淀诱生缺陷形态与轻掺P硅片表现相同，均为层错；重掺As原子不仅对氧沉淀的低温形核有抑制作用，同时还影响氧沉淀的高温长大，使氧沉淀诱生缺陷形态不同于轻掺硅片，氧沉淀诱生缺陷为位错环；(2)低温形核条件对重掺硅片氧沉淀及其诱生缺陷行为有很大影响，慢速线性升温退火由于能使低温氧沉淀核心的形成与长大同时进行，相对于等温退火而言，显著地促进了后续高温氧沉淀形成，氧沉淀诱生缺陷密度增高。3，本文对RTP方法应用于重掺N型硅片氧的内吸杂作了研究，指出：(1) RTP方法可以成功地应用于重掺N型硅片氧的内吸杂：经高温RTP预处理并结合后续退火处理，重掺N型硅片表面形成有效的洁净区，体内形成氧沉淀及其诱生缺陷；(2)为了使重掺N型硅片体内形成合理密度的体缺陷富集区，硅片在RTP方法预处理后仍需结合低高温两步退火，低温氧沉淀形核预处理是必不可少的步骤。
But lots of statistical comparison under the approximately identical technological conditions indicates that the grade of carbide network rises when the total content of carbon and chrome increases, which followings approximately the rule that if the total content of carbon and chrome increases 0.02%, the grade of carbide network will increases 0.07. According above stated, the content of carbon and chrome should be controlled at the lower limit of critical field.③ That GCr15 bearing steel is rapidly quenched after it has been rolled, on the one hand inhibit recrystal grain coarsening, on the other hand reserve intracrystalline defect caused by roll forming, which lead to finer grains and more dispersed carbide and improve the grade of carbon network before annealing treatment. Meanwhile, such structure makes a large number of point particles retain during the annealing treatment. The particles are existing core of spheroidization, that's to say which takes advantage of carbide spheroidization. It is the real reason that our subject can gain success.④ The present sampling taking rule is between splat cooling area and non splat cooling area, which is an important reason that the examination result is not stable.
因此，实际生产中应尽量将碳含量和铬含量控制在标准范围的下限；③轧后经高压水湍流急冷至800℃左右，一方面抑制了再结晶晶粒长大，同时保留了轧制变形引起的晶内缺陷，使碳化物分布比较弥散、均匀，改善了退火前的碳化物网状级别；同时，这样的组织使得在退火加热过程中遗留了大量碳化物质点，在球化时成为现成的核心，有利于碳化物的球化；④按目前的取样规则取样，正好介于急冷段与非急冷段之间，检验结果往往无法真实代表GCr15钢材的网状碳化物级别。
The results show that in the range of substrate temperture from 300 K to 1070 K, the main factor that influences annealing temperature is power of iodine-tungsten lamp rather than substrate temperature. The critical power of iodine-tungsten lamp for silicon to be molten is 2.6 kW, the thearetical date approximates the experimental data.
研究结果表明：在300~1 070 K的衬底温度范围内，退火温度主要由碘钨灯功率决定，而衬底温度对其影响不大；发生固相外延生长的最大碘钨灯功率或液相熔融再结晶的理论临界碘钨灯功率为2.6 kW，与实测值基本相符。
The film quality and electrical properties of the PZT films increase with the decreasing of film thickness in one annealing cycle. The critical thickness is increased, and better ferroelectric properties are obtained.
研究结果表明，降低薄膜单次退火厚度有利于提高PZT薄膜的成膜质量和电性能，主要表现在薄膜的临界厚度得到了显著提高，铁电性能得到了增强。
In the process known as annealing, we heat the steel above the critical temperature and permit it to cool very slowly.
在通常所说的退火的热处理过程中，我们把钢加热到临界温度以上，再让它慢慢冷却。
The paper designed an enhanced simulated annealing algorithm (ESA) with back jump tracking in connection with the critical path theory of a job shop scheduling problem.
结合作业车间调度问题的关键路径理论，设计了一种具有多次退火过程的调度算法。
Based on the first modern large continuous annealing line localized fullyCA5 of Silicon Steel Plate of WISCO and combined engineering experience of the author, this paper describes critical items and its solutions during the design of this line, and also describes the application of new technology and its effect.
本文就第一条国产化的大型连续退火机组——武钢硅钢片厂CA－5机组建设的背景，设计过程中存在的难点及其解决的办法、新技术的应用、取得的成果、存在的问题及今后的发展方向，结合本人实际工作进行较为详细的阐
Alloying and non-equilibrium distribution in 17-4PH stainless steel result in reversed austenite formation below Ac1 temperature. The reverse transformation from martensite crystals to the same austenite orientation suggests the effect of crystal memory. Intermediate quenching of dual-phase steel can control the initial structure before inter-critical annealing and refine the grian size and morphology in final microstructure. Cold drawing of 316L stainless steel wire can induce the martensitic reaction.
目前对於17-4PH不锈钢的研究发现，合金添加及非平衡合金元素分布可改变沃斯田铁相的安定性，甚至使沃斯田铁在低於Ac1温度时发生成核及成长，且其晶体方位亦循原displacive相变态之variant逆向回复而有晶体方位记忆效应，使得扩散型相变态产物之方位因先前displacive相变态而受限。
Genetic simulated annealing algorithm coupled with niche is applied to search rock slopes critical slip surface in this study.
将小生境思想与遗传模拟退火算法相结合，应用于岩质边坡滑动面的搜索中。