This means that when the engine block access to a maximum power and maximum thrust, block 2 has been prepared to do a good job of bonding.
这意味着当发动机在1挡获得最大功率和最大推力时，2挡已做好接合的准备。
It indicated that a-C: F films deposited at higher microwave power have a better thermal stability. And the films deposited at R. T were mainly composed by CF2 and CF as well as C=C bonding. F is desorbed with C with the form of CFx at lower annealing temperature and the transformation of the band state of C atom from SP* to SP2 occurs at higher annealing temperature which enhances the C=C bonding of a-C:F film. Thefilms take on amorphous structure even after 400C annealing. There is a close relationship between relative concentration of C=C bond and optical band gap and a lower optical band gap corresponds to a better thermal stability. Both dielectric constant and dielectric loss increased after annealing due to the loss of F and enhanced orientation polarization, respectively.
结果表明，高微波功率下制备的a-C：F膜具有较好的热稳定性；室温下沉积的薄膜主要由CF_2和CF键和C=C键构成，当退火温度较低时，C与F成分主要以CFx的形式从膜中逸出，当退火温度继续升高后，部分SP~3C转变成Sp~2C，使膜中C=C键含量增加；a-C；F薄膜经历了400℃热处理后仍为非晶结构；薄膜C=C键含量与光学带隙之间存在密切的关联，低的光学带隙对应较好的热稳定性；退火山氟的逸出导致了介电常数增大，薄膜取向极化的增加使得介电损耗增大。
This course will introduce the systematic design methodology of the SiP technologies, partitioning, integration, Flip-Chip, wire bonding, muti-stacks, high density sticking, measurement. Moreover, the signal and power integrity analysis will be introduced here.
介绍SIP生产中使用的系统设计技术，分割、整合、覆晶、线接合、多层堆叠、高密度黏著技术和量测方法；再介绍讯号与电源完整分析。
Grounding and Bonding: Provision for grounding and bonding for industrial control equipment is provided by one grounding conductor for each incoming one for each outgoing power circuit, based on one circuit for three poles or less and one circuit for each additional three poles or less, plus one grounding
接地 和焊接：提供工业控制设备的接地或者焊接时，它提供了一个接地电阻给进入或者离开的电源电路。，一个基于电路的三极或更少和一个线路，每增加三极或更少，在适当的时候增加一个接导体来控制线圈。
To overcome this drawback, high-power AlGaInP LED with Cu and SiC substrates using wafer bonding is fabricated.
为克服此一缺点，透过晶圆接合的技术，可在铜或碳化矽基板上制作高功率的AlGaInP LED。
Seriously dust stratification and slag-bonding to the security and economical operating of power plant boiler is very big influent, so that research and develop online monitoring and diagnoses the technology is very necessary.
严重积灰和结渣对火电厂锅炉的安全、经济运行有很大的影响，研究和开发在线监测诊断技术十分必要。
As for neutral silicane coupling agent, when amino-group-containing organic compounds were added into it, the reaction procedure could be accelerated and the flexible material could be rotmed through self-condensation reaction so as to increase the interfacial bonding power.
对于中性硅烷偶联剂，外加胺基或含胺基的有机化合物，也可加速反应进程.自缩合反应形成有柔韧性的物质，从而提高了界面的粘接力。
The cage of Faraday screen, Equipotential bonding, Power supply of the LEMP to prevent the damage caused by thunder will greatly increase the ability to resist the inference of the LEMP in the base station.
实践证明采用法拉第屏蔽笼、等电位体连接接地、防雷击电磁脉冲干扰电源可以极大地提高基站的防雷击电磁脉冲干扰能力。
The influences of ultrasonic power on heavy aluminum wire wedge bonding strength were investigated.
超声功率是影响粗铝丝引线键合强度的最主要因素之一。
The effect of bonding time on the bonding strength of thick aluminum wire wedge bonding was studied under different ultrasonic power conditions.
试验研究了不同超声功率条件下，键合时间对粗铝丝引线键合强度的影响规律。
Thermosonic flip chip bonding is a reliable and efficient connection technique for power optoelectronic devices.
结果表明，在合适的热超声参数范围内，焊接后的功率型LED光电特性和出光一致性较好，证明了热超声倒装焊接技术是一种可靠有效的功率型光电子器件互连技术。
However, in the large ultrasonic power rate conditions (about 45%~70%), the bonding quality decreases correspondingly and over bonding happens.
在超声功率较大的情况下（超声功率比为45%~70%），增大超声功率反而会降低键合强度，出现过键合的情况；
The effect of ultrasonic power on large aluminum wire wedge bonding strength is stud - ied by changing the ultrasonic power rate, which is defined as the rate between set and maximum ultrasonic power.
在这种典型的工业工艺键合参数下，通过改变超声功率比（设定超声功率与最大可调功率之比）来改变超声功率，研究了超声功率对引线键合强度的影响规律。
Metal wire bonding interconnection is the key means in the internal matching technology of RF power transistor.
金属键合线互连是射频大功率晶体管内匹配技术中的关键手段。
Through the comparative analysis of the sand filling method and fractional dimension of power spectrum method, we can find that the great wave of the bonding surface and the roughness point can both be described with the fractional dimension number of power spectrum and its intercept.
对粘结面采用灌砂法和功率谱法分维对比分析后认为，功率谱法的分维值及相应的截距可对粘结面大的波形起伏与粗糙点进行描述。
Burn-out of a microwave power device due to the poor bonding between beryllium oxide and base metal sink was investigated using Sound Scanning technique.
利用声学扫描检测技术，提示了热烧毁的微波功率器件氧化铍陶瓷基片与底座金属散热片的焊接不良现象；
Based on the principle and characteristic of the power bond graph, power bond graph model and dynamics equation are created for the Parallel Bonding Mechanism of the IC Chip Die in this paper, which a simulation is carried out using Matlab/Simulink.
这里基于功率键合图的原理和特点，建立了IC芯片粘片机并联焊头机构的功率键合图模型和动力学方程，并用Matlab/Simulink进行了仿真。
Using the silver paste and epoxy resin as die bonding materials, two kinds of power LEDs are made.
分析了功率型LED热阻系统的构成，对采用银浆和环氧胶作为芯片键合材料的功率型LED热阻进行了对比研究。
The experiment result shows that using the silver paste as the die bonding material, the thermal conductivity of power LED is greatly improved. Its thermal resister is 100 ℃/W lower than that using the epoxy resin as the die bonding material.
研究结果表明：采用银浆作为芯片键合材料可以显著改善功率型LED的热阻系统，同采用环氧胶作为芯片键合材料的功率型LED相比，其热阻下降了约100℃/W。
Moreover, the changes of bonding parameters are reflected to the impedance and power of PZT transducer, and there is direct relationship among bonding strength and impedance and power of PZT transducer.
键合环境的变化反映在PZT阻抗和功率变化之中，且PZT阻抗和功率与键合强度存在直接关系。