Jack, S-Indicator, Bass, Treble, 6 Memories, Sweep, BFO, Keypad, Clock-Timer, Tilt Stand, Up-Down Tuning, Sleep, Antenna Trimmer, Antenna Terminals, Record Jack, Dial Lamp, Dial Lamp Switch, Rec.
杰克，第S -指标，低音，高音，6月的回忆，打扫，bfo ，键盘，时钟计时器，倾斜的立场，直至向下微调，睡眠，微调天线，天线终端，记录千斤顶，拨号灯，拨号灯开关，接收。
Technical information:*** stop:o*oooooo8e(o*oooooo5, o*BFo6o5oED, OXB914E71C, O*OOOOOOOO)*** NV4-disp. dll-address BFo65oED base at BFo12ooo, Datestamp 47o6coab
技术资料：***停止：噢* oooooo8e （海外* oooooo5 ，澳* bfo6o5oed ，oxb914e71c ，澳* oooooooo ）*** nv4 - disp.dll地址bfo65oed基地bfo12ooo ，邮戳47o6coab
Moreover, interaction between the ferroelectric and ferromagnetic orders will lead to the effect of magnetoelectric (ME) coupling.
此外，BFO中的铁电序和铁磁序的相互作用将产生磁电耦合效应。
It was found that the self-polarization in the pure BFO film is mainly induced by the epitaxial stress between LNO electrode and BFO film.
结果表明，BFO薄膜和LNO电极之间的外延应力是纯的BFO薄膜产生自极化的主要原因。
Moreover, dielectric, ferroelectric and leakage characteristics test results show that the buffer layer has a significant impact on the characteristics of the BFO thin film dielectric constant, remanent polarization, coercive field and leakage current.
另外，介电、铁电、和漏电等特性的测试结果表明不同的缓冲层对BFO薄膜的介电常数、剩余极化、矫顽场和漏电流等特性具有明显的影响。
Using XRD to determine the effects on lattice constant of the BFO layer and achieved the adjustment of BFO film strain through the buffer layer.
使用XRD的方法确定了不同缓冲层对BFO层的晶格常数的影响，实现了通过缓冲层对BFO薄膜应变的调节。
We have successfully prepared BFO/BTO/SRO/STO and BFO/STO/SRO/STO two kinds of multilayer structure epitaxial thin films.
我们成功制备了BFO/BTO/SRO/STO和BFO/STO/SRO/STO两种多层结构外延薄膜。
The BFO/STO/TiO2/AlGaN/GaN heterostructure was prepared and the effect of ferroelectric performance of the epitaxial BFO thin films on the intrinsic electrical properties of AlGaN/GaN was explored preliminarily.
制备了BFO/STO/TiO2/AlGaN/GaN异质结构，初步探索了外延生长的BFO薄膜的铁电性对AlGaN/GaN本征电学性能的影响。
These conclusions validated the effect of the STO/TiO2 double buffer layers preliminarily, and laid the foundation of BFO & GaN integration. 2.
这些结论初步验证了STO/TiO2双缓冲层的作用，为实现BFO与GaN的集成奠定了基础。
It could be realized that the BFO (111) thin films epitaxially grown on GaN substrate by inserting the STO/TiO2 double buffer layers.
而通过插入STO/TiO2双缓冲层，实现了BFO（111）薄膜在GaN基片上的外延生长。
Superior ferroelectric properties with the remanent polarizations (Pr) of about 100 μ C/cm2 have been observed in polycrystalline and epitaxial BFO films deposited using pulsed-laser deposition, sputtering and metal organic chemical vapor deposition.
具有优异性能的多晶和外延的BFO薄膜已被激光脉冲沉积，磁控溅射以及化学气相沉积法制备成功，其剩余极化强度（Pr）达到了100μC/cm2。
BFO-PSO algorithm is introduced to solving the parameter design of the fractional order controller. And the coordination control objective function is proposed, which can damp system modal oscillations and keeping node voltage stability.
针对分数阶控制器参数设计问题，引入BFO-PSO算法进行参数求解，提出了阻尼系统模态振荡和稳定节点电压的协调控制目标函数，将控制器设计转化为一个多目标的优化问题。
However, due to the large lattice mismatch of BFO and GaN in the relationship, BFO films grown in island mode. So, the BFO films were polycrystalline and had a large number of defects, showing poor electrical properties.
但是在这种外延关系下BFO与GaN的晶格失配较大，BFO薄膜以岛状模式生长，生长的BFO薄膜为多晶薄膜，并具有大量的缺陷，表现出较差的电学性能。
If BFO and GaN are integrated to form the BFO/GaN integrated film, not only can the multi-fuctional integration of dielectric passive components and semiconductor active components be realized, but also we would exploit the coupling effect at the interface to develop some new devices.
如果将BFO和GaN通过薄膜集成形成BFO/GaN集成薄膜，不但可以实现单片器件上介电无源器件和半导体有源器件的功能集成，而且可以应用BFO和GaN半导体在界面处的耦合效应研发出一些新型器件。
The growth of BFO on GaN (0002) substrate was studied.
论文对在GaN（0002）基片上生长BFO薄膜进行了研究。
The bacterial foraging optimization (BFO) is studied and improved in this paper.
在研究细菌觅食优化（BFO）算法机理的基础上，改进了BFO算法。
The impurity formation and the abnormal grain growth phenomenon in BFO thin films were inhibited by introducing BLT layer.
BLT层的引入在一定程度上抑制了BFO中少量的杂相，而且抑制了BFO薄膜中存在的部分晶粒异常长大现象。
It was found that the leakage currents for all the BFO films increase with the increase of annealing temperature.
实验结果表明，随着退火温度的升高，BFO薄膜的漏电流逐渐增大。
Compared to the content of Fe2 + in BFO, Mn substitution can suppress the generation of Fe2 +.
与BFO中的Fe2+含量相比，Mn的掺杂能有效的抑制Fe2+离子的产生。
In this thesis, we systematically study the growth of BFO on GaN by pulsed laser deposition technique, providing a basis of practical utilization of the BFO/GaN integrated films. 1.
本论文采用脉冲激光沉积技术（PLD），对GaN基片上BFO薄膜的生长进行了系统的研究，为BFO/GaN集成薄膜的实用化提供了一定的基础。