TEM observation indicated that tangled dislocation cells are typical microstructure in cold worked sample; After 350℃ annealing, the dislocations arrange regularly and the density decreases sharply, the alloy recovers partly and the grain size is about 500 nm; Further annealing to 500℃, recrystallization proceeds gradually in a wide temperature range due to the Zener drag effect of Al3 phase.
TEM观察表明，冷变形态的合金组织为交错缠结的位错胞经过350℃退火后位错在晶界规律排列，密度大大降低，发生回复，晶粒保持在500 nm以下。在400-500℃的退火过程中再结晶过程缓慢进行。由于Al3相的Zener 拖曳作用，合金的再结晶温度区间宽化。
Results show that sulfides can be refined and disperse evenly after continuous multi-pass rolling, with the average width of sulfides being 4.91μm, the average length being 14.27μm, the average aspect ratio being 3.03, and the average area being 44.72μm2. The sulfides can refine the microstructure due to their pinning effect, and the reefing effect shows Zener relation.
结果表明，连续、多道次变形的轧制工艺能够使硫化物破碎并均匀弥散化，硫化物平均宽度4.91μm，平均长度14.27μm，平均长宽比3.03，平均面积44.72μm2；硫化物组织细化的原因是作为第二相粒子钉扎晶界，硫化物颗粒细化组织满足Zener关系。
At this point the zener diode conducts current in the revese direction, which maintaining the zener voltage across its terminals.
此时齐纳击穿两极管引导 revese 方向的涌流，维持横过它的终端机的齐纳击穿电压。
Dense bodies were obtained by hot pressing.
但减小的趋势比Zener模型预测的弱。
This part is arranged as follows: In chapter 1, we give a brief review of the progress of theory and experiment on single-molecule magnets, including Mn12, Fe8, Mn4 and supermolecular magnetic cluster [Mn4]2. In chapter 2, we introduce some basic theoretical descriptions about quantum resonant tunneling and some experimental results, taking example for Mn12 system. In chapter 3, we give a study of the staircase hysteresis loop of Mn12 system based on Landau-Zener model and numerically calculation method of exact diagonalization of Hamiltonian. In chapter 4, we study the quantum resonant tunneling in supermolecular magnetic cluster [Mn4]2 system by means of the numerically exact solution of the time-dependent Schrodinger equation.
第一部分共有五章：第一章，我们简要回顾了，关于单分子磁体Mn12、Fe8、Mn4和超分子磁团簇[Mn4]2在理论和实验上的发展过程；第二章，我们以Mn12体系为例，介绍了关于量子共振隧穿的一些基本理论描述，以及一些实验结果；第三章，我们给出了用Landau-Zenner模型和严格对角化的数值计算方法，对Mn12体系中阶梯状磁滞回路所作的一些研究；第四章，我们用数值求解含时薛定谔方程的方法，研究超分子磁团簇[Mn4]2体系的量子共振隧穿过程；第五章，我们提出一种唯象的局域热平衡方法，研究Mn12体系热助隧穿的动力学过程。
To calculate the value of the resistor in both cases, the following formulas apply: R=(3.3V–VD–VLED)/ILED (Figure 1a), and R=(VCC–VZ–VLED)/ILED (Figure 1b), where ILED is the desired LED-on current, VD is the voltage across the diode when an ILED current flows through it, VZ is the zener-diode voltage, and VLED is the forward voltage across the LED when an ILED current flows through it.
为计算两种情况的电阻值，使用下面的公式：R=(3.3V–VD–VLED)/ILED（图1a），和R=(VCC–VZ–VLED)/ILED（图1b），在这里ILED为LED所需的电流，VD为ILED电流流过二极管产生的电压，VZ为zener二极管电压，VLED为ILED电流流过LED的前向电压。
The flow stress increases with strain rate increasing and decreases with deformation temperature increasing. The 7039 aluminum alloy shows the phenomenal of dynamic recovery at the strain rates less than 10 /s; the alloy shows the phenomenal of partial dynamic recrystallization at the strain rates higher than 10 /s, The flow stress of 7039 aluminum alloy during high temperature deformation can be represented by Zener-Hollomon parameter.
结果表明：变形温度和应变速率对合金流变应力的大小有显著影响，流变应力随变形温度的升高而降低，随应变速率的增加而升高；在应变速率ε0/s条件下合金表现出动态回复特征，而应变速率ε=10/s时，合金发生了局部动态再结晶。7039铝合金的高温流变行为可用Zener-Hollomon参数描述。
The hot deformation behavior of 7055 aluminum alloy compressed at high temperature can be represented by constitutive equation of Zener-Hollomon parameters.
结果表明：合金在热变形过程中流变应力随温度的升高而减小，随应变速率的增加而增大，7055铝合金的高温塑性变形行为可以用包含Zener-Hollomon参数的流变应力方程进行描述。
SMD diodes: Microwave, high frequency, radio frequency, attenuation, detector, Schottky, rectifier, fast recovery, zener, varactor, transient suppression, arrays, .....
SMD二极管：微波、高频、射频、衰减、检波、肖特基、整流、快恢复、齐纳、变容、瞬态抑制、阵列、稳压…。。
The monolithic IC voltage references oper-ates as a low temperature coeffcient 5.0V zener with 0.6ohm dynamic impedance.
单片集成电路的电压基准歌剧院作为低温系数5.0V与0.6ohm动态阻抗齐泰什。
The results show that TiB2/6351 composites have the steady-state flow characteristics and belong to positive strain rate sensitized materials during hot compression deformation. At lower strain rates and higher temperatures, with the increase of strain, the flow stress increases to peak value and then falls down, at last tends to smooth gradually. The curves express the feature of dynamic recrystallization. But at higher strain rates and lower temperatures, dynamic recovery occurs obviously. The flow stress of in-situ TiB2/6351 composites during high temperature compression deformation can be represented by Zener-Hollomon parameter including Arrhenius term.
结果表明：在实验范围内，该复合材料高温压缩时均存在稳态流变特征且属于正应变速率敏感材料；在低应变速率和较高温度条件下，随变形程度的增加，流变应力增加到峰值后缓慢下降，逐渐趋于平稳，呈现明显的动态再结晶特征；而在较高应变速率和较低温度下，呈现明显动态回复特征；可用包含Arrhenius项的Zener-Hollomon参数描述TiB2/6351复合材料高温压缩流变行为。
Firstly, I provide a brief review of the previous achievements and investigations on the low-dimensional quantum devices and semiconductor superlattice, in which some principal theories such as Bloch Oscillations, Wannier-Stark ladder, Zener tunneling and related progress in experiments are introduced.
首先综述了过去三十年低维量子器件与半导体超晶格的发展与相关研究，介绍了Bloch振荡、Wannier-Stark台阶、Zener隧穿等关键理论以及相关实验方面的进展，并引入简化模型：紧束缚模型与单带模型。
Placing a Zener diode between the gate and supply ensures that VGSS will not be exceeded.
配售之间的门和齐纳二极管，确保供应的V进行安全总局将不会被超过。
A 6.3-V zener diode is used because it is the most stable zener diode over time and temperature.
所以用6.3V齐纳二极管，是因为它无论地时间上还是在温度上都是最稳定的。
However, a Zener diode circuit of 3-4V placed on the output will produce a TTL-compatible output signal.
然而，齐纳二极管电路中的3 - 4 V的放在输出将产生的TTL兼容的输出信号。
Client software development is introduced with the example of zener diode tester software design, and multiple threads technology is explained emphatically.
以稳压二极管测试仪的软件开发为例介绍了客户端的软件开发，着重介绍了多线程技术的应用。
If a lower GATE pin voltage is desired, use an external Zener diode.
如果一个更低的栅极端子电压需要，使用外部齐纳二极管。
Many technicians are confused on how to really read a zener diode code.
许多技术员混淆如何真正阅读网络Zener二极管代码。
Compared with the traditional Zener diode, TVS diode has a larger
与传统的齐纳二极管相较，瞬态电压抑制二极管的P/N结面积更大。
With this type of supply arrangement, the internal 15.6V zener clamp diode from VCC to COM will determine the steady state IC supply voltage.
这种类型的供应安排，内部15.6V齐纳钳位二极管从虚拟通道连接到COM将决定稳态集成电路电源电压。