In that electric circuit, the Q1 is the switch of MOSFET, the model number is 2SK429L, 555 circuit provides the controlling pulse, transformer totally contain 5 coils, full circle number is:1 and 5 for 18 full circle, 2, 3 and 4 for 40 full circle, coil 5 is the access for the coil 1 to release the energy when Q1 is shut down, and such design is beneficial for the work of the switch power supply.
为了解决单相桥式逆变器驱动电路需要三路独立电源问题，设计了一个简单的开关电源该电路中，Q1为MOSFET开关，型号为2SK429L.555电路提供控制脉冲，变压器共有5个线圈，匝数分别为：1、5为18匝，2、3、4为40匝，线圈5为线圈1在Q1截止期间释放能量的通道，有利于开关电源的工作。
ABSTRACT:Active power filter is a new method to realize harmonic elimination and VAR compensation using IGBT or MOSFET. It doesnt have the disadvantages of the traditional method to realize harmonic elimination and VAR compensation which uses the LC filters.
有源电力滤波器应用全控型器件实现动态谐波抑制和无功补偿，能对变化谐波与无功进行快速补偿，并克服了传统 LC滤波和无功补偿方法的缺点。
And the pn-junction diode, the bipolar junction transistor, the metal-oxide-semiconductor capacitor, and the field-effect transistor are covered in 2nd part.
除此之外，针对现在主流的MOS器件与工艺，讨论现代MOSFET的发展趋势。
The paper analyzes the present situation, the development of high frequency switching mode power supply and the soft switching technique, then to know the asymmetrical half-bridge suits to be used in the medium power situation. The paper firstly emphasizes on the AHB converter`s steady state operation principle and the relationship between the input and output voltage, then bring forward the voltage and current pressure of some important components and the condition to realize the MOSFET`s ZVS; and then considering the problem of transformer offset magnetizing current and the voltage oscillation in the circuit resulting from the inductor which in serial with the transformer, the paper analyses the reasons and the methods to resolve it. To the offset magnetizing current, it can be better through adjusting the circuit parameter or resolves in series with capacitor in double current rectify circle, but to the voltage oscillation it can be resolved by clamping the inductor to the source or ground. At last, the simulation proves the methods right.
本文首先分析了国内外高频开关电源及其软开关技术发展和现状，继而在此基础上着重分析适用于中等功率场合的不对称半桥电路的稳态工作原理及其稳态输入输出电压关系，给出关键器件的电压电流应力，并对其实现零电压开通的条件进行了讨论及改进，继而针对不对称半桥电路存在变压器直流偏置和串联电感带来的振荡问题进行了分析并提出了各自的解决办法即主功率变压器的直流偏置问题可以通过调整原电路的参数来改善或通过在次级采用倍流整流和串隔直电容来彻底解决此问题，而对于串联电感带来的电压振荡问题可以通过对串联电感进行双向钳位来解决，并通过仿真证明各种方法的可行性。
Product main circuit of the IGBT, MOSFET devices and so on, therefore, fundamentally a new grid on a glass tube for the characteristics of the older generation of high-frequency equipment.
本产品主电路采用IGBT、MOSFET器件等，因此，从根本上格新了以玻壳电子管为特征的老一代高频设备。
Also by adopting half cycle modulation, the loss of switching and conduction losses of MOSFET are reduced.
该文分析了双模式运行的逆变器的切换过程。
I thought at length about putting in a voltage doubler circuit to charge the smaller reversing battery from the main forward battery so that it doesn't have to be removed and charged but some research of available parts suggested that the cost of such an approach was quite high, however an unintended outcome of using the totem pole output design and the separate negative battery approach is that the current spike that is caused by the magnetic field collapse within the motor when the forward MosFET turns off at the oscilator rate at low speeds gets transferred to the negative battery by the protection schottky rectifier across the negative P Channel MosFET and this current pulse is quite significant.
我以为，在长度约将在一个电压倍增电路收取较小的扭转电池从主要着电池，所以它没有被遣送离境，并被控，但一些研究现有的部分建议的成本，这种做法是相当高，但是一个意外的结果，使用图腾柱输出的设计与单独的负面电池的做法是，目前穗这是所造成的磁场崩溃内部的电机时，提出的MOSFET关闭在oscilator率在低速得到转移以负面电池保护肖特基整流器全国的负面P通道MOSFET和电流脉冲，这是相当可观。
6A comprises: a drain region of first conductivity type (606 a body region of second conduct ivity type (602) provided over the drain region such that drain and body regions form a first junction; a source region of first conductivity type (604) provided over the body region such that source and body regions form a second junction; source metal (610) disposed on an upper surface of the source region; a trench (608, 609, and 614) extending through source and body region and into the drain region; and a gate region comprising an insulating layer (609) lining at least a portion of the trench, and a conductive region (608) within the trench adjacent 609. The body region is separated from the source metal.
该沟道MOSFET器件(图6A)包括：第一电导率类型的漏极区(606)；漏极区上提供的第二电导率类型的体区(602)，使得漏极区和体区形成第一结；体区上提供的第一电导率类型的源极区(604)，使得源极区和体区形成第二结；位于源极区上表面上的源极金属(610)；延伸通过源极区、通过体区并进入到漏极区的沟道(608、609和614)；和栅极区，其包括：绝缘层(609)，其排列了至少一部分的沟道，和导电区(608)，其位于邻近沟道609内。
In general, small volume inverter mosfet inverter circuit, there the whole bridge with high frequency inverter circuits pressor push-pull inverter circuits, and will boost the circuit transformer neutral plug up in power, two power tube is alternant, output power, because get ac power transistor DeBian altogether, drive and control circuit is simple, because of the transformer has certain leakage, can limit the short-circuit current, thus improving the reliability of the circuit.
中、小容量逆变器一般有推挽逆变电路、全桥逆变电路和高频升压逆变电路三种，推挽电路，将升压变压器的中性插头接于正电源，两只功率管交替工作，输出得到交流电力，由于功率晶体管共地边接，驱动及控制电路简单，另外由于变压器具有一定的漏感，可限制短路电流，因而提高了电路的可靠性。
The studies are two aspects in simply: one is the scaling of MOSFET and another is their modeling and simulation.
MOSFET的研究简单概述为两个方面：一是MOSFET的等比例缩小，二是相应的器件模型及模拟。
Channel Synchronous Rectifier MOSFET Driver Programmable Timeout Reverse Inductor Current Sense Pulse Transformer Synchronization Wide VCC supply range: 4.5V to 11V 15ns Rise/Fall Times at VCC = 5V, CL = 4700pF Undervoltage Lockout Small SO-8 Package
沟道同步整流器MOSFET驱动器可编程超时反向电感电流检测同步宽脉冲变压器的VCC电源电压范围：4.5V至11V之间15ns的上升/下降时间在VCC = 5V时，氯= 4700pF欠压锁定小型SO - 8封装
In this method, MOSFET is selected as power components to decrease the system cost.
该方法选用MOSFET作为功率器件，降低了功率驱动单元设计的成本。
By using the LADES, the simulations of thin-film deep submicron SOI/MOSFET has been carried out and many advantages of thin-film SOI/MOSFET have been analyzed.
对薄层深亚微米SOI器件的平衡态和直流稳态进行了实际的二维模拟，从器件物理的角度和载流子的运动机制出发，分析解释了薄层SOI/MOSFET优于厚层和体硅器件的众多特性。
This device has been designed especially for bipolar digital transistors and small signal MOSFETS
该器件的设计，尤其是双极晶体管和小数字信号MOSFET
This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.
该器件的设计，尤其是作为一种双极晶体管和小数字信号MOSFET取代低电压应用。
I used a pot instead of the 100K bias resistors, so I could vary the output side of the MOSFET at 1/2 the supply. This maximizes the output potential of this driver. R1 limits the input current. The diodes are reversed-biased protection only. They short out spikes greater than 9 volts and negative 1 volt.
我使用了一只可调电阻来代替100K的偏置电阻，便于调节输出端电位为电源电压的1/2，使输出信号的裕量达到最大限度。R1是输入信号的限流电阻，二极管起到反向偏置保护作用，能吸收高于9V或低于-1V的尖锋信号。
This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies.
这组MOSFET是用来取代单一的MOSFET及同步并行肖特基二极管直流：直流电源。
This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET.
这二极管具有相似的特点，以一个独立的外部肖特基二极管与MOSFET的平行。
In order to obtain high-current short pulse with high repeat frequency for the fast kicker, the experimental study based on the MOSFET solid modulator technique was carried out.
为了获得这一快速高重复频率的强流短脉冲，采取基于MOSFET的固态调制器技术。
Applied strain effects on MOSFET transistors are being heavily explored, both in academia and industry, as a possible alternative to dimensional scaling. This thesis focuses on how st....
变形实验条件於常温25℃下进行，应变速率为2700s-1到7500s-1，变形后之试件利用光学显微镜以及扫描式电子显微镜进行微观与破裂分析，再将实验所得到数据和微观观察结果进行分析，。。。。