So it turns out that the Boltzman distribution law is only the first order approximation of the Bose or Fermi distribution. We can say it is the latter that is the general distribution law of ideal gas particle in a potential field.
由此可以证明玻耳兹曼分布规律只是玻色和费米分布规律的一级近似，所以后者才是处在势场中理想气体粒子的一般性的分布规律。
E is the electron charge, m is its mass, o is the crystal volume and f is the Fermi distribution.
1，是电子电荷，m是它的质量，是水晶的体积和f费米分布。
After compared the densities of states and the charge distribution of MgH2 with and without titanium addition, it is found that the improvement of dehydrogenating properties of MgH2 caused by titanium alloying originates from the weakened bonding between magnesium and hydrogen, and the increasing of the valence electrons at Fermi level and decreasing of the HOMO-LUMO gap near Fermi level.
电子态密度与电子密度的进一步分析发现：合金化体系解氢能力增强的主要原因在于Mg—H之间的成键作用较弱，以及Ti诱导费米能级 E F处电子密度 N的增加和 E F附近HOMO-LUMO能隙Δ E H-L的变窄甚至消失。
In superconducting state, the electron intensity of field emission energy distribution has an extra peak near the Fermi level.
特别的是，在超导的状态下，铌的场发射电子能量分布会在费米能量附近有特别大的电流密度。
Electron momentum distribution and Fermi energy can be calculated.
从本征分布和抛物线函致可以算出电子的动量分布信息和估测费米能。
Coulomb interaction V causes the inhomogeneous distribution of charge density, Fermi energy shift to high energy position and new Localized states appears.
另外，计入U、V使得电荷密度发生了重新分布，而且在缺陷及其周围格点上出现了束缚电荷；费米能级向能量升高的方向移动，并且在新的费米能级点出现了电子局域态。
In this paper, the distribution functions of three kinds of charge defect centers are given by using statistical mechanics method according to model of charge defect centers in amorphous semiconductors. The relation between Fermi energy and average electron number at charge defect centers is also given.
本文根据非晶半导体中的荷电悬挂键模型，用统计力学的方法推导出三种荷电缺陷中心的分布函数，并由此得到系统的费米能级和荷电中心上平均电子数的关系式。
Basing on the Fermi statistical distribution of electron and hole in semiconductor silicon, the dependence of the transmittance of silicon under CO2 laser irradiation on temperature has been calculated, furthermore theoretical results were proved by experimental data.
本文基于半导体材料硅（Si）中电子、空穴的费米统计分布，计算了Si对CO2激光的透射率随温度的变化，并用实验理论作了验证。
In 1956 years, Kubo presented his theory aiming at level station distribution of nano-particles Fermi surface electron, and thought that at low temperature electron levels of single particle near Fermi surface is equal level.
1956年，久保提出自己的理论。久保理论是针对纳米粒子费米面附近电子能级状态分布而提出来的，认为低温下单个粒子的费米面附近电子能级看成等间隔的能级。
Using the method of Fermi - Dirac distribution, we can consider the Coulomb blockade in the quantum dot. This work is in progress at present.
而利用费米-狄拉克分布的方法可以考虑到量子点中能级之间的相互作用，这是目前正在进行的工作。
The probability functions of carriers occupying the impurity level are calculated by applying the Fermi-Dirac distribution function and the thermal-equilibrium theory of the impurity ionization, the result accord with that obtained by applying the conventional thermodynamic and statistical theory and the method of computing the chemical potential.
利用费米分布函数和杂质电离的热平衡理论计算了载流子在杂质能级上的占据概率，其结果与传统的热力学统计理论及计算化学势方法得到的结果完全一致。
The electron and hole system are described by a Fermi-Dirac distribution with two parameters: the quasi-Fermi level μ and the carrier temperature Tc which is initially higher than the lattice temperature Tc > TL.
这时电子和空穴各自分布在能带底，形成准费米狄拉克分布。这种热平衡费米分布可以用两个参数来描述，准费米能级μ和载流子温度Tc，开始时载流子温度高于晶格温度Tc>Tl。
In high energy density plasmas produced by intense laser pulses, electrons are degenerated and obey the Fermi-Dirac distribution. The electron degeneracy leads to consider the Fermi statistics pressure and the quantum Bohm potential. Meanwhile, electrons are relativistic due to driving by intense laser pulses.
在强激光束产生的高能量致密等离子体，电子的简并使得我们必须考虑Fermi统计压力和Bohm势；由于强激光脉冲的作用，电子是相对论性。
Elementary derivation of Fermi-Dirac and Bose-Einstein distribution
费米-狄拉克分布和玻色-爱因斯坦分布的简单推导
Finally, by taking into account the Fermi motion correction and nuclear binding effect including its affection on the parton distribution of nucleon, we offered the description of average nuclear structure function, which is different from that given within the framework of conventional nuclear physics.
最后，在统一考虑核内核子的费米运动修正、核子的束缚能效应及其所引起的核子内部分子分布改变的基础上，给出了不同于传统核物理框架中的平均核结构函数。
Through the Bose-Fermi mapping and numerical calculation, we find that the reduced single-particle density, momentum distribution and natural orbital of the system are related to the 8 barrier strength and the total particle number.
利用玻色-费米映射理论，通过计算我们发现，体系的约化单粒子密度矩阵，自然轨道和动量分布与δ势垒的强度和粒子总数有关。
The nanowire diameter related wave vector uncertainty, carrier distribution in InAs nanowires and the carrier concentration related Fermi-Thomas screening effect were proposed to play important roles for this phenomenon.
通过波矢不确定性与纳米线直径的关系、InAs纳米线中载流子的分布、载流子浓度相关的Fermi-Thomas屏蔽效应对该现象进行了理论分析，给出了合理的解释。
When the system is in the Tonks regime, the density profiles show obvious Fermi-like distribution, however, for strong enough spin-spin interaction, apparent deviation of the density distribution from the Fermi-like distribution.
当系统在Tonks区域时，密度分布表现出明显的费米类分布特性。但是，当自旋相互作用足够强时，密度分布不再是费米类的。
The interaction potentials between two heavy ions are calculated by using the energy density formalism and the nuclear Fermi density distributions, the factor of the neutron skin and the surface diffusion of the neutron distribution increasing with the increases of the neutron excess is considered.
用能量密度公式及小液滴模型给出的费米密度分布，并引入中子皮及中子分布弥散度随中子过剩自由度增加而增加这一因素，计算了重离子反应相互作用势及熔合位垒。
And the relationships of the positron lifetime and the local electron density, that of the Doppler line shape, the angular correlation and the distribution of electron momentum density, Fermi planes are analyzed respectively.
分析了在该体系中正电子寿命参量与局域电子密度、多普勒线形参量和角关联参量与电子动量密度分布和费米面之关联。