So the spectral profile of stretching vibrational modes of C—H gradually changes and the Raman shift moves to higher frequency with increasing temperature and pressure, indicating.
由于压力效应大于温度效应，随温度压力的增大，νCH区伸缩振动的拉曼位移向高频方向移动，说明C—H键键能在增大；而O—H伸缩振动峰的相对面积随温度压力的增大而增大，说明对C—H键而言，O—H键总强度是增加的，由此推测在地质条件下，压力可能阻碍或延长了干酪根的降解生烃过程。
So the spectral profile of stretching vibrational modes of CH_3 and CH_2 gradually changes and the Raman shift moves to higher frequency with increasi.
由于压力效应大于温度效应，随温度压力的增大CH3，CH2对称和反对称伸缩振动的拉曼位移均向高频方向移动，说明C—H键键能在增大。
The result shows that the spectral profile of stretching vibrational modes of CH and OH gradually changes and Raman shift moves to higher and lower frequency respectively with increasing pressure, which indicates that the energy of C—H bonding increases with pressure, and the influence of hydrogen bonding on O—H function group is greater than that of pressure.
其中νCH区伸缩振动随压力增大，拉曼位移向高频方向移动，说明C—H键键能在增大；而νOH区伸缩振动随压力增大，拉曼位移则向低频方向移动，表明氢键对O—H基团的影响大于压力效应。
The intensity ratio of TO and LO inMCT was observed to be different. Such difference was explained in terms of the different Ramangeometry arrangement.〓. The laser-induced micro-photoluminescence in the range of 1000～5000〓(1.34eV～1.83eV) was found for the first time in LPE MCT epilayer. The center of photoluminescence wasat 2750〓 or 1.62eV and the FWHM of luminescence was 2000〓 or 0.25eV. We assume thatthe photoluminescence is due to recombination of electron from an anion vacancy resonance levelto the top of valance. In addition, new Raman shift was observed at 750〓 in LPE MCTepitaxial film.〓. The laser-induced micro-photoluminescence with quasi-periodic structure was observed forthe first time at room temperature in one of MOVPE MCT epitaxial film samples. The range offluorescence was from 1.46eV to 2.21eV, i. e., 1.73eV above the conduction band edge.
2首次在LPE生长的碲镉汞外延薄膜的显微Raman谱中，在1000～5000〓范围发现了激光激发显微荧光，该荧光的发光范围换算为电子伏特标度为1.34eV～1.83eV，荧光的发光中心大约位于2750〓，即1.62eV，发光的半峰高宽约为2000〓或0.25eV；指出该显微荧光来源于碲镉汞薄膜中的阴性离子空位共振能级的激光激发发光；观察到了碲镉汞外延薄膜中一个新的Raman散射峰，位于750〓位置； 3首次在一块用MOVPE方法生长的〓Te外延薄膜的显微Raman谱中，发现了1.46eV至2.21eV范围并伴随有周期结构的显微荧光峰，该发光峰对应的能带中心位于〓Te材料导带底上方1.73eV，通过研究得出样品在1.46eV至2.21eV范围的显微荧光峰是由于改进 MOCVD 生长工艺，提高了碲镉汞外延薄膜的结构质量所致；通过分析指出该显微荧光来源于外延层中的阴性离子空位的共振能级发光。
The frequency shift of Raman Scattering depends on the vibration energy level of scattered molecular.
拉曼散射会随著散射分子的震动能阶不同，而有频率上的变化。
According to the definition of frequency shift, the relationship between the wavelength of the raman peak and frequency shifts, wavelength of the exciting light was established, λ=.
由频移的定义，推导出拉曼峰的波长与激发光波长及频移的关系：λ=。
H2, He, Ar in the laser so as to i出ibit the pl时olysis reaction of the methane gas to a certain extent.
标 签 喇曼频移甲院激光器人眼安全 Raman shift methane laser eye-safe
The results show that the delicate variation of micro-environment or super molecular number can be correctly resolved by Raman shift. That is, the calculated Raman wavenumber of Al—F symmetric stretching vibration is much closer to experimental data when super molecular number gradually increases.
结果表明，拉曼位移能够准确反映微观环境的差异或超分子聚集数，即随超分子聚集数的增加，Al—F对称伸缩振动频率的计算值越接近实验值。
The results show that, because of the Raman effect, the femtosecond signal pulse is no longer maintain symmetry, and the lagging behind the blue shift pulse peak power decreases with the increase of transmission distance and solitons redshift appear.
结果表明，由于受喇曼效应的影响，飞秒信号脉冲产生的脉冲对不再保持对称，滞后的蓝移脉冲峰值功率随传输距离的增加而减小，产生孤子红移。
The Mg-O bonds, the Raman frequencies and the number of the v〓-SO〓 band of the ion pair chain〓(n=1-4) increase with the growing of the chain, and it is well consistent with the experiments. It explains that the phenomena of gel appearance in the supersaturate solution of MgSO〓 and the blue shift of Raman spectra, as well as the phenomena of FWHH getting wider.
在〓（n=1-4）离子对链中电荷交替分布，Mg-O键长随链增长而增长，拉曼光谱频率随链增长而增高，最大强度振动波段的数目随链增长而增大，这些计算结果解释了MgSO〓过饱和溶液中出现的凝胶现象和其拉曼光谱的波段蓝移和半峰宽变宽的变化。
Influence of AC-Stark shift on field entropy and entanglement in non-degenerate Raman process［J］.
非简并喇曼过程中交流斯塔克位移对场熵和缠绕的影响［J］。
We find that the Raman spectra shift to higher frequency under hydrostatic pressure. We also find that the shift rate and the change of intensity of the Raman peaks from backbone and side chain vibrations are different.
我们发现在压力增大的情况下，m-LPPP的拉曼光谱的峰值会往高频率的方向位移，而且随著压力变化发现主鍊与侧链间的拉曼峰值移动速度和强度的变化率均的不同。
After that we use the XRD (X-ray diffraction) and Raman shift to identify the material, the SEM to identify our specimen, we can make sure our specimen is CuO and the morphology.
又通过进行SEM的图像拍摄，进行对氧化铜纳米拓扑结构进行分析。
We have found that there are regularity changes in the Raman spectra of grossular-andradite as the rise of iron in the crystal structure from grossular to andradite after studying of Raman spectra of grossular-andradite, that is to say, their peaks shift to low wavenumber; At the same time, there are some changes in the bond angles of O-Si-O and O-Y-O:the higher of iron contents, the evidenter of splitting of two wind vibration peaks of SiO4 tetrahedron and YO6 octahedron.
通过对钙铝榴石-钙铁榴石的拉曼光谱研究发现，从钙铝榴石到钙铁榴石，随着矿物结构中铁的含量的增加，他们的拉曼光发生规律性的变化，即所有的峰向低波数方向发生漂移；同时，由于铁含量的不同使得石榴石晶体结构中O-Si-O与O-Y-O之间的键角发生了一定的变化，在其拉曼光谱谱图上表现为铁的含量越高，[SiO4]四面体和Y-O八面体的两个弯曲振动峰分裂得越明显。
The red shift of Raman spectra have been found in some nano-TiO_2/CF film samples, which was analyzed and discussed.
其拉曼峰与块体TiO_2相比，峰位出现了红移，对此现象进行了分析和讨论。
Both the alloy composition and residual strain in the grains were determined from the Raman shift.
这两者可借由拉曼频谱来决定晶粒中合金的组合成份以及残留的应力。
The assignments of the recorded FT-IR frequencies and Raman shift are given.
第三部分：硼砂饱和溶液的差示FT-IR光谱和Raman光谱分析。
The result shows that the Raman peak of heavy water moves to lower frequency, and the linear relationship exists between Raman shift and pressure.
结果表明：压力增大的过程中，重水的拉曼伸缩振动光谱向低频方向移动，并且频移和压力基本呈线性相关。
Both of the first-order and second-order Raman peaks were found to shift and broaden with increasing temperature.
发现当温度上升时，纳米硅线的一级以及二级Raman谱的峰位向低波数端移动，谱峰半高宽度展宽。
An optical microscope, atomic force microscope, scanning electron microscope, high resolution double crystal X-ray diffraction, and Raman shift spectrum are used to analyze the sample.
采用光学显微镜、原子力显微镜、扫描电子显微镜、高分辨率双晶X射线衍射和喇曼谱测试对薄膜进行分析。